Ben Kaczer

ORCID

Publication Activity (10 Years)

Years Active: 2002-2024
Publications (10 Years): 69

Top Venues

IRPS

ESSDERC

ICICDT

Microelectron. Reliab.

Publications

Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer
Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. IRPS (2024)
Pablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny, Stanislav Tyaginov, Georges G. E. Gielen, Erik Bury, Ben Kaczer
Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. IRPS (2024)
Erik Jan Marinissen, Harish Dattatraya Dixit, Ronald Shawn Blanton, Aaron Kuo, Wei Li, Subhasish Mitra, Chris Nigh, Ruben Purdy, Ben Kaczer, Dishant Sangani, Pieter Weckx, Philippe J. Roussel, Georges G. E. Gielen
Silent Data Corruption: Test or Reliability Problem? ETS (2024)
Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. IRPS (2024)
Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. CoRR (2024)
Dishant Sangani, Ben Kaczer, Pieter Weckx, Philippe J. Roussel, Subrat Mishra, Erik Jan Marinissen, Georges G. E. Gielen
Possible Origins, Identification, and Screening of Silent Data Corruption in Data Centers. IRPS (2024)
Y. Guo, R. Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. IRPS (2024)
Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. IRPS (2024)
D. Sangani, Javier Diaz-Fortuny, Erik Bury, Ben Kaczer, Georges G. E. Gielen
The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper). IRPS (2023)
Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, S. Brus, Romain Ritzenthaler, E. Dentoni Litta, Kris Croes, Ben Kaczer, N. Horiguchi
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. VLSI Technology and Circuits (2023)
James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang
A Pragmatic Model to Predict Future Device Aging. IEEE Access 11 (2023)
Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS (2023)
L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS (2023)
Andrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf
Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. IRPS (2023)
Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer
Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. IRPS (2023)
Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer
Reliability challenges in Forksheet Devices: (Invited Paper). IRPS (2023)
Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer
Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. IRPS (2023)
Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS (2022)
Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits (2022)
Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS (2022)
Nicolo Ronchi, Lars-Åke Ragnarsson, U. Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den Bosch, Jan Van Houdt
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW (2022)
Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. IRPS (2022)
Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf
Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. IRPS (2022)
L. Panarella, Quentin Smets, D. Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. DRC (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS (2022)
Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS (2022)
Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. IRPS (2022)
Erik Bury, Adrian Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS (2022)
Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS (2022)
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS (2021)
Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS (2021)
Jacopo Franco, H. Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT (2021)
Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS (2021)
Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS (2021)
Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer
A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS (2021)
Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS (2020)
Adrian Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS (2020)
Subrat Mishra, Pieter Weckx, Ji-Yung Lin, Ben Kaczer, Dimitri Linten, Alessio Spessot, Francky Catthoor
Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). IRPS (2020)
Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS (2020)
Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS (2020)
Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Gös, Tibor Grasser, Ingrid De Wolf
On the impact of mechanical stress on gate oxide trapping. IRPS (2020)
Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS (2020)
Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS (2020)
Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS (2020)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits 54 (10) (2019)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS (2019)
Marco Simicic, Pieter Weckx, Bertrand Parvais, Philippe Roussel, Ben Kaczer, Georges G. E. Gielen
Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations. IEEE Trans. Very Large Scale Integr. Syst. 27 (3) (2019)
Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, K. Banerjee, Umberto Celano, M. Suzuki, Dimitri Linten, Jan Van Houdt
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS (2019)
Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marco Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi
CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. IRPS (2019)
Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS (2019)
Erik Bury, Adrian Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten
} bias space. IRPS (2019)
Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC (2019)
Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS (2019)
Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS (2019)
Jacopo Franco, Ben Kaczer, Adrian Chasin, Erik Bury, Dimitri Linten
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS (2018)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC (2018)
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS (2018)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS (2018)
Erik Bury, Ben Kaczer, Simon Van Beek, Dimitri Lintern
Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations. ESSDERC (2018)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marco Simicic, Adrian Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81 (2018)
Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS (2018)
Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS (2018)
Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marco Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85 (2018)
Erik Bury, Adrian Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marco Simicic, Pieter Weckx, Dimitri Linten
Self-heating-aware CMOS reliability characterization using degradation maps. IRPS (2018)
Dimitrios Stamoulis, Simone Corbetta, Dimitrios Rodopoulos, Pieter Weckx, Peter Debacker, Brett H. Meyer, Ben Kaczer, Praveen Raghavan, Dimitrios Soudris, Francky Catthoor, Zeljko Zilic
Capturing True Workload Dependency of BTI-induced Degradation in CPU Components. ACM Great Lakes Symposium on VLSI (2016)
Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC (2016)
Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. ESSDERC (2016)
Ahmet Unutulmaz, Domenik Helms, Reef Eilers, Malte Metzdorf, Ben Kaczer, Wolfgang Nebel
Analysis of NBTI effects on high frequency digital circuits. DATE (2016)
Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marco Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC (2015)
Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39 (8) (2015)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC (2015)
Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS (2015)
Gerhard Rzepa, Wolfgang Gös, Ben Kaczer, Tibor Grasser
Characterization and modeling of reliability issues in nanoscale devices. ISCAS (2015)
Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marco Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC (2015)
Pieter Weckx, Ben Kaczer, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. ICICDT (2015)
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS (2015)
Z. Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Y. Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken
ESD characterization of planar InGaAs devices. IRPS (2015)
Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. IRPS (2015)
Tibor Grasser, M. Wahl, Wolfgang Gös, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS (2015)
Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marco Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC (2015)
Azusa Oshima, Pieter Weckx, Ben Kaczer, Kazutoshi Kobayashi, Takashi Matsumoto
Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations. ICICDT (2015)
Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS (2015)
Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT (2015)
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Gös, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
Characterization and modeling of charge trapping: From single defects to devices. ICICDT (2014)
Seyab Khan, Innocent Agbo, Said Hamdioui, Halil Kukner, Ben Kaczer, Praveen Raghavan, Francky Catthoor
Bias Temperature Instability analysis of FinFET based SRAM cells. DATE (2014)
Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken
Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. 54 (9-10) (2014)
Halil Kukner, Moustafa A. Khatib, Sebastien Morrison, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. ISQED (2014)
Petr Pfeifer, Zdenek Plíva, Pieter Weckx, Ben Kaczer
On reliability enhancement using adaptive core voltage scaling and variations on nanoscale FPGAs. LATW (2014)
Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer
Impact of Off State Stress on advanced high-K metal gate NMOSFETs. ESSDERC (2014)
Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. 22 (2) (2014)
Halil Kukner, Pieter Weckx, Sebastien Morrison, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. DSD (2014)
Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth
Circuit simulation of workload-dependent RTN and BTI based on trap kinetics. Microelectron. Reliab. 54 (11) (2014)
Halil Kükner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. Microprocess. Microsystems 37 (8-A) (2013)
Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52 (9-10) (2012)
Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52 (9-10) (2012)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20 (8) (2012)
Halil Kukner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. DSD (2012)
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT (2012)
Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer, Brice De Jaeger
Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements. IEEE Trans. Very Large Scale Integr. Syst. 19 (9) (2011)

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Ben Kaczer