Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.

Barry J. O'Sullivan Romain Ritzenthaler Gerhard Rzepa Z. Wu E. Dentoni Litta O. Richard T. Conard V. Machkaoutsan Pierre Fazan C. Kim Jacopo Franco Ben Kaczer Tibor Grasser Alessio Spessot Dimitri Linten N. Horiguchi

Published in: IRPS (2019)

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