Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.
Barry J. O'SullivanRomain RitzenthalerGerhard RzepaZ. WuE. Dentoni LittaO. RichardT. ConardV. MachkaoutsanPierre FazanC. KimJacopo FrancoBen KaczerTibor GrasserAlessio SpessotDimitri LintenN. HoriguchiPublished in: IRPS (2019)