Jacopo Franco

Publication Activity (10 Years)

Years Active: 2011-2024
Publications (10 Years): 39

Top Topics

Silicon Dioxide

Cumulative Distribution Functions

Gate Dielectrics

Reliability Assessment

Top Venues

VLSI Technology and Circuits

Publications

J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS (2024)
Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. IRPS (2024)
Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS (2024)
Y. Guo, R. Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. IRPS (2024)
Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. IRPS (2024)
Andrea Vici, Robin Degraeve, Naoto Horiguchi, Ingrid De Wolf, Jacopo Franco
SILC and TDDB reliability of novel low thermal budget RMG gate stacks. IRPS (2024)
Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, S. Brus, Romain Ritzenthaler, E. Dentoni Litta, Kris Croes, Ben Kaczer, N. Horiguchi
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. VLSI Technology and Circuits (2023)
James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang
A Pragmatic Model to Predict Future Device Aging. IEEE Access 11 (2023)
Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS (2023)
Andrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf
Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. IRPS (2023)
Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer
Reliability challenges in Forksheet Devices: (Invited Paper). IRPS (2023)
Hiroaki Arimura, S. Brus, Jacopo Franco, Y. Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, N. Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. VLSI Technology and Circuits (2023)
A. Vandooren, N. Parihar, Jacopo Franco, Roger Loo, H. Arimura, R. Rodriguez, F. Sebaai, S. Iacovo, Kevin Vandersmissen, W. Li, G. Mannaert, D. Radisic, E. Rosseel, Andriy Hikavyy, A. Jourdain, O. Mourey, G. Gaudin, S. Reboh, L. Le Van-Jodin, G. Besnard, C. Roda Neve, B.-Y. Nguyen, I. Radu, E. Dentoni Litta, N. Horiguchi
Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections. VLSI Technology and Circuits (2022)
Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf
Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. IRPS (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS (2022)
Kristof Croes, Veerle Simons, Brecht Truijen, Philippe Roussel, Koen Van Sever, Artemisia Tsiara, Jacopo Franco, Philippe Absil
Degradation mechanisms and lifetime assessment of Ge Vertical PIN photodetectors. OFC (2022)
Erik Bury, Adrian Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS (2022)
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS (2022)
Vamsi Putcha, H. Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert
Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. IRPS (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS (2021)
Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS (2021)
Jacopo Franco, H. Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT (2021)
Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS (2021)
Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS (2021)
Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer
A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS (2021)
Adrian Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS (2020)
Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Gös, Tibor Grasser, Ingrid De Wolf
On the impact of mechanical stress on gate oxide trapping. IRPS (2020)
Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS (2020)
Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS (2019)
Erik Bury, Adrian Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten
} bias space. IRPS (2019)
Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS (2019)
A. Vandooren, Liesbeth Witters, Jacopo Franco, Arindam Mallik, Bertrand Parvais, Z. Wu, Amey Walke, V. Deshpande, E. Rosseel, Andriy Hikavyy, W. Li, L. Peng, Nouredine Rassoul, Geraldine Jamieson, Fumihiro Inoue, G. Verbinnen, Katia Devriendt, Lieve Teugels, N. Heylen, E. Vecchio, T. Zheng, Niamh Waldron, Vincent De Heyn, Dan Mocuta, Nadine Collaert
Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling. ICICDT (2018)
Jacopo Franco, Ben Kaczer, Adrian Chasin, Erik Bury, Dimitri Linten
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS (2018)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marco Simicic, Adrian Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81 (2018)
Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS (2018)
Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marco Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85 (2018)
Erik Bury, Adrian Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marco Simicic, Pieter Weckx, Dimitri Linten
Self-heating-aware CMOS reliability characterization using degradation maps. IRPS (2018)
Nadine Collaert, AliReza Alian, H. Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, D. Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean
Beyond-Si materials and devices for more Moore and more than Moore applications. ICICDT (2016)
Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC (2016)
Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marco Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC (2015)
Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39 (8) (2015)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC (2015)
Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS (2015)
Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS (2015)
Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marco Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC (2015)
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS (2015)
Z. Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Y. Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken
ESD characterization of planar InGaAs devices. IRPS (2015)
Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marco Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC (2015)
Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS (2015)
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Gös, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
Characterization and modeling of charge trapping: From single defects to devices. ICICDT (2014)
Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer
Impact of Off State Stress on advanced high-K metal gate NMOSFETs. ESSDERC (2014)
Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52 (9-10) (2012)
Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52 (9-10) (2012)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20 (8) (2012)
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT (2012)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Mitsuhiro Togo, N. Horiguchi, Guido Groeseneken
Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. IEEE Trans. Circuits Syst. II Express Briefs (7) (2012)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS (2011)