Wolfgang Gös

Publication Activity (10 Years)

Years Active: 2007-2023
Publications (10 Years): 9

Top Topics

Semiconductor Devices

Defect Classification

Permalloy Films

Top Venues

Microelectron. Reliab.

Publications

Johannes Ender, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov
Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. LSSC (2023)
M. Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadamek, W. J. Loch, N. P. Jørstad, Siegfried Selberherr, Wolfgang Gös, Viktor Sverdlov
Spin Transfer Torques in Ultra-Scaled MRAM Cells. MIPRO (2022)
M. Bendra, Johannes Ender, Simone Fiorentini, T. Hadamek, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov, Siegfried Selberherr
Finite Element Method Approach to MRAM Modeling. MIPRO (2021)
Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Gös, Tibor Grasser, Ingrid De Wolf
On the impact of mechanical stress on gate oxide trapping. IRPS (2020)
Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Gös, Johannes Ender, Simone Fiorentini, Viktor Sverdlov
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC (2019)
Wolfgang Gös, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87 (2018)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC (2015)
Gerhard Rzepa, Wolfgang Gös, Ben Kaczer, Tibor Grasser
Characterization and modeling of reliability issues in nanoscale devices. ISCAS (2015)
Tibor Grasser, M. Wahl, Wolfgang Gös, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS (2015)
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Gös, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
Characterization and modeling of charge trapping: From single defects to devices. ICICDT (2014)
Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49 (9-11) (2009)
Enzo Ungersboeck, Wolfgang Gös, Siddhartha Dhar, Hans Kosina, Siegfried Selberherr
The effect of uniaxial stress on band structure and electron mobility of silicon. Math. Comput. Simul. 79 (4) (2008)
Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Gös, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr
VSP - A gate stack analyzer. Microelectron. Reliab. 47 (4-5) (2007)