Robin Degraeve

Publication Activity (10 Years)

Years Active: 1999-2024
Publications (10 Years): 28

Top Topics

Tamper Detection

Reliability Assessment

Leakage Current

Top Venues

VLSI Technology and Circuits

Publications

Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer
Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. IRPS (2024)
Anirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Andrea Vici, Clement Merckling
Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current. IRPS (2024)
Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. IRPS (2024)
Andrea Vici, Robin Degraeve, Naoto Horiguchi, Ingrid De Wolf, Jacopo Franco
SILC and TDDB reliability of novel low thermal budget RMG gate stacks. IRPS (2024)
Andrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf
Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. IRPS (2023)
Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer
Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. IRPS (2023)
Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer
Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. IRPS (2023)
David Coenen, Herman Oprins, Robin Degraeve, Ingrid De Wolf
Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42 (7) (2023)
Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits (2022)
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. VLSI Technology and Circuits (2022)
Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf
Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. IRPS (2022)
Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. IRPS (2022)
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS (2022)
Andrea Vici, Robin Degraeve, João Pedro Bastos, Philippe Roussel, Ingrid De Wolf
Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks. IRPS (2022)
Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW (2021)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS (2021)
Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar
Modeling and spectroscopy of ovonic threshold switching defects. IRPS (2021)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits 54 (10) (2019)
Jonas Doevenspeck, Robin Degraeve, Andrea Fantini, Peter Debacker, Diederik Verkest, Rudy Lauwereins, Wim Dehaene
Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications. IRPS (2019)
Jonas Doevenspeck, Robin Degraeve, Stefan Cosemans, Philippe Roussel, Bram-Ernst Verhoef, Rudy Lauwereins, Wim Dehaene
Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications. ESSDERC (2018)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC (2018)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS (2018)
Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC (2018)
Ana Lebanov, Andrea Fantini, Robin Degraeve, Manoj Nag, Myriam Willegems, Steve Smout, Soeren Steudel, Jan Genoe, Paul Heremans, Kris Myny
Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate. ESSDERC (2018)
Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS (2018)
Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018 (1) (2018)
C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC (2015)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC (2015)
Baojun Tang, Kris Croes, Y. Barbarin, Y. Q. Wang, Robin Degraeve, Y. Li, Maria Toledano-Luque, Thomas Kauerauf, Jürgen Bömmels, Zsolt Tokei, Ingrid De Wolf
As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability. Microelectron. Reliab. 54 (9-10) (2014)
Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt
gate stacks. Microelectron. Reliab. 47 (4-5) (2007)
Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. 47 (4-5) (2007)
Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46 (5-6) (2006)
Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. Microelectron. Reliab. 45 (5-6) (2005)
J. Pétry, Wilfried Vandervorst, Luigi Pantisano, Robin Degraeve
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. Microelectron. Reliab. 45 (5-6) (2005)
Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen
A new method for the analysis of high-resolution SILC data. Microelectron. Reliab. 43 (9-11) (2003)
Ben Kaczer, Robin Degraeve, Mahmoud Rasras, A. De Keersgieter, K. Van de Mieroop, Guido Groeseneken
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. 42 (4-5) (2002)
Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger
at ultra low voltages. Microelectron. Reliab. 42 (9-11) (2002)
Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43 (3) (1999)