Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode.
Taras RavsherDaniele GarbinAndrea FantiniRobin DegraeveSergiu ClimaGabriele Luca DonadioShreya KunduHubert HodyWouter DevulderJan Van HoudtValeri Afanas'evRomain DelhougneGouri Sankar KarPublished in: VLSI Technology and Circuits (2022)
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