Jan Van Houdt

Publication Activity (10 Years)

Years Active: 1998-2023
Publications (10 Years): 21

Top Topics

Compute Intensive

Theoretical Insights

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Top Venues

VLSI Technology and Circuits

Publications

Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den Bosch, Jan Van Houdt, Maarten Rosmeulen
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW (2023)
Swatilekha Majumdar, Stefan Cosemans, Arindam Mallik, Peter Debacker, Francky Catthoor, Jan Van Houdt
Evaluating the Effects of FeFET Device Variability on Charge Sharing Based AiMC Accelerator. ISCAS (2023)
Mihaela Ioana Popovici, Jasper Bizindavyi, Gourab De, Dae Seon Kwon, Gouri Sankar Kar, Jan Van Houdt
Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate. ESSDERC (2023)
Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW (2023)
Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits (2022)
Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS (2022)
Nicolo Ronchi, Lars-Åke Ragnarsson, U. Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den Bosch, Jan Van Houdt
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW (2022)
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. VLSI Technology and Circuits (2022)
Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS (2022)
Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS (2022)
Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW (2021)
Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. IRPS (2021)
K. Banerjee, L. Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, G. Van den Bosch, Jan Van Houdt
First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. IMW (2021)
K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW (2021)
D. Saito, T. Kobayashi, Hiroki Koga, Nicolo Ronchi, K. Banerjee, Y. Shuto, Jun Okuno, K. Konishi, Luca Di Piazza, A. Mallik, Jan Van Houdt, M. Tsukamoto, K. Ohkuri, Taku Umebayashi, Takayuki Ezaki
Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications. VLSI Circuits (2021)
Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Frank Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS (2020)
Konrad Seidel, K. Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS (2019)
Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, K. Banerjee, Umberto Celano, M. Suzuki, Dimitri Linten, Jan Van Houdt
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS (2019)
Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS (2018)
Naga Sruti Avasarala, Bogdan Govoreanu, Karl Opsomer, Wouter Devulder, Sergiu Clima, Christophe Detavernier, Marleen van der Veen, Jan Van Houdt, Marc Henys, Ludovic Goux, Gouri Sankar Kar
Doped GeSe materials for selector applications. ESSDERC (2017)
Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken, Jan Van Houdt
From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. ESSDERC (2017)
Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectron. Reliab. 54 (9-10) (2014)
Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. Microelectron. Reliab. 54 (9-10) (2014)
Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene
Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. Microelectron. Reliab. 52 (3) (2012)
Pavel Poliakov, Pieter Blomme, Miguel Corbalan, Jan Van Houdt, Wim Dehaene
Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness. Microelectron. Reliab. 51 (5) (2011)
Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt
gate stacks. Microelectron. Reliab. 47 (4-5) (2007)
Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt
dielectric stacks by pulsed C-V technique. Microelectron. Reliab. 47 (4-5) (2007)
Jan Van Houdt, Dirk Wellekens, Luc Haspeslagh
The HIMOS flash technology: the alternative solution for low-cost embedded memory. Proc. IEEE 91 (4) (2003)
Jorgo Tsouhlarakis, Guido Vanhorebeek, Geert Verhoeven, Jan De Blauwe, Shiho Kim, Dirk Wellekens, Paul Hendrickx, Luc Haspeslagh, Jan Van Houdt, Herman Maes
A flash memory technology with quasi-virtual ground array for low-cost embedded applications. IEEE J. Solid State Circuits 36 (6) (2001)
M. Lorenzini, Luc Haspeslagh, Jan Van Houdt, H. E. Maes
Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles. VLSI Design 2001 (1) (2001)
Donato Montanari, Jan Van Houdt, Guido Groeseneken, Herman E. Maes
Novel level-identifying circuit for flash multilevel memories. IEEE J. Solid State Circuits 33 (7) (1998)