Antonio Arreghini

Publication Activity (10 Years)

Years Active: 2014-2024
Publications (10 Years): 11

Top Topics

Metal Oxide Semiconductor

Top Venues

Microelectron. Reliab.

Publications

Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW (2024)
D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. IRPS (2024)
Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS (2024)
S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. IMW (2024)
S. Rachidi, S. Ramesh, L. Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, G. Van den Bosch, Maarten Rosmeulen
Enabling 3D NAND Trench Cells for Scaled Flash Memories. IMW (2023)
Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den Bosch, Jan Van Houdt, Maarten Rosmeulen
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW (2023)
S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, G. Van den Bosch, Maarten Rosmeulen
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. IMW (2022)
L. Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. Bastos, S. Ramesh, G. Van den Bosch, Maarten Rosmeulen
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. IMW (2022)
Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, H. Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, G. Van den Bosch, Arnaud Furnémont
Liquid Memory and the Future of Data Storage. IMW (2022)
Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. IMW (2021)
Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf, A. Furnémont
Impact of Mechanical Stress on the Electrical Performance of 3D NAND. IRPS (2019)
Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectron. Reliab. 54 (9-10) (2014)