Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.
Yusuke HigashiJ. P. BastosAdrian Vaisman ChasinLaurent BreuilAntonio ArreghiniS. RameshS. RachidiY. JeongGeert Van den BoschMaarten RosmeulenPublished in: IRPS (2024)
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