Yusuke Higashi

Publication Activity (10 Years)

Years Active: 2017-2024
Publications (10 Years): 13

Top Topics

Chemical Vapor Deposition

Gate Dielectrics

Error Tolerance

Top Venues

VLSI Technology and Circuits

IEEE Trans. Circuits Syst. II Express Briefs

Publications

J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS (2024)
Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS (2024)
Yuta Aiba, Yusuke Higashi, Hitomi Tanaka, Hiroki Tanaka, Fumie Kikushima, Toshio Fujisawa, Hideko Mukaida, Masayuki Miura, Tomoya Sanuki
Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability. VLSI Technology and Circuits (2023)
Harumi Seki, Reika Ichihara, Yusuke Higashi, Yasushi Nakasaki, Masumi Saitoh, Masamichi Suzuki
Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V. IRPS (2023)
Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh
Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. IRPS (2023)
Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits (2022)
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS (2022)
Yusuke Higashi, Tetsushi Ikeda, Hiroyuki Takai, Satoshi Iwaki
Future route presentation to autonomous mobile wheelchair passengers using the movement of vibrotactile stimuli. SICE (2022)
Hitomi Tanaka, Yuta Aiba, Takashi Maeda, Kensuke Ota, Yusuke Higashi, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Tomoya Sanuki
Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation. IMW (2022)
Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, K. Banerjee, Umberto Celano, M. Suzuki, Dimitri Linten, Jan Van Houdt
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS (2019)
Yuichiro Mitani, Yusuke Higashi, Yasushi Nakasaki
Study on mechanism of thermal curing in ultra-thin gate dielectrics. IRPS (2018)
Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectron. Reliab. 70 (2017)
Takao Marukame, Kodai Ueyoshi, Tetsuya Asai, Masato Motomura, Alexandre Schmid, Masamichi Suzuki, Yusuke Higashi, Yuichiro Mitani
Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. IEEE Trans. Circuits Syst. II Express Briefs (4) (2017)