Marc M. Heyns

Publication Activity (10 Years)

Years Active: 1999-2024
Publications (10 Years): 5

Top Topics

Mechanical Properties

Parameter Settings

Top Venues

VLSI Technology and Circuits

Publications

Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. CoRR (2024)
Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits (2022)
Giacomo Talmelli, Thibaut Devolder, Nick Träger, Johannes Förster, Sebastian Wintz, Markus Weigand, Hermann Stoll, Marc M. Heyns, Gisela Schütz, Iuliana P. Radu, Joachim Gräfe, Florin Ciubotaru, Christoph Adelmann
Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing. CoRR (2019)
Tarun Agarwal, Bart Soree, Iuliana P. Radu, Praveen Raghavan, Gianluca Fiori, Marc M. Heyns, Wim Dehaene
Material selection and device design guidelines for two-dimensional materials based TFETs. ESSDERC (2017)
Tarun Agarwal, Iuliana P. Radu, Praveen Raghavan, Gianluca Fiori, Aaron Thean, Marc M. Heyns, Wim Dehaene
Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective. ESSCIRC (2016)
Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS (2015)
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT (2012)
M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectron. Reliab. 47 (6) (2007)
G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, S. Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. Microelectron. Reliab. 45 (5-6) (2005)
Chao Zhao, Gert Roebben, Hugo Bender, Edward Young, S. Haukka, Michel Houssa, Mohamed Naili, Stefan De Gendt, Marc M. Heyns, Omer Van der Biest
thin films during high temperature X-ray diffraction. Microelectron. Reliab. 41 (7) (2001)
Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43 (3) (1999)