Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.
Md Nur K. AlamYusuke HigashiBrecht TruijenBen KaczerMihaela Ioana PopoviciBj O'SullivanPhilippe RousselRobin DegraeveMarc M. HeynsJan Van HoudtPublished in: VLSI Technology and Circuits (2022)
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