Guido Groeseneken

Publication Activity (10 Years)

Years Active: 1998-2024
Publications (10 Years): 25

Top Topics

Energy Distribution

Advanced Technologies

Gate Dielectrics

Top Venues

Microelectron. Reliab.

Publications

Kateryna Serbulova, Zi-En Qiu, Shih-Hung Chen, Alexander Grill, Kuo-Hsing Kao, Jo De Boeck, Guido Groeseneken
Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications. IRPS (2024)
Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS (2023)
W.-C. Chen, S.-H. Chen, Anabela Veloso, Kateryna Serbulova, Geert Hellings, Guido Groeseneken
Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs. VLSI Technology and Circuits (2023)
Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf
Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS (2022)
K. Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, J. De Boeck, Guido Groeseneken, Julien Ryckaert, Gert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi
Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO. VLSI Technology and Circuits (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS (2021)
Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS (2021)
K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW (2021)
Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS (2020)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS (2019)
Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken, Zhanfei Chen, Jun Liu, Yuki Yamashita, Kazutoshi Kobayashi
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. ESSDERC (2019)
Yashwanth Balaji, Quentin Smets, Dennis Lin, I. Asselberghs, Iuliana P. Radu, Guido Groeseneken
Tunnel FETs using Phosphorene/ReS2 heterostructures. DRC (2019)
Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken
Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices. DRC (2019)
Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS (2019)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS (2018)
Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS (2018)
Jasper Bizindavyi, Anne S. Verhulst, Bart Soree, Guido Groeseneken
Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs. DRC (2018)
Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS (2018)
Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018 (1) (2018)
Nian Wang, Shih-Hung Chen, Geert Hellings, Kris Myny, Soeren Steudel, Mirko Scholz, Roman Boschke, Dimitri Linten, Guido Groeseneken
ESD characterisation of a-IGZO TFTs on Si and foil substrates. ESSDERC (2017)
Francky Catthoor, Guido Groeseneken
Will Chips of the Future Learn How to Feel Pain and Cure Themselves? IEEE Des. Test 34 (5) (2017)
Yashwanth Balaji, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu, Dan Mocuta, Guido Groeseneken
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. ESSDERC (2017)
Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken, Jan Van Houdt
From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. ESSDERC (2017)
D. Verreck, Anne S. Verhulst, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. ESSDERC (2016)
Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS (2015)
Simon Van Beek, Koen Martens, Philippe Roussel, Gabriele Luca Donadio, Johan Swerts, Sofie Mertens, Gouri Sankar Kar, Tai Min, Guido Groeseneken
Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. IRPS (2015)
C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC (2015)
Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39 (8) (2015)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC (2015)
Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS (2015)
Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS (2015)
Pieter Weckx, Ben Kaczer, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. ICICDT (2015)
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS (2015)
Z. Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Y. Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken
ESD characterization of planar InGaAs devices. IRPS (2015)
Roman Boschke, Guido Groeseneken, Mirko Scholz, Shih-Hung Chen, Geert Hellings, Peter Verheyen, Dimitri Linten
ESD protection diodes in optical interposer technology. ICICDT (2015)
Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marco Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC (2015)
Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS (2015)
Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken
Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. 54 (9-10) (2014)
Halil Kukner, Moustafa A. Khatib, Sebastien Morrison, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. ISQED (2014)
Ajay Bhoolokam, Manoj Nag, Adrian Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans
Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. ESSDERC (2014)
Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. 22 (2) (2014)
Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken
As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. Microelectron. Reliab. 54 (4) (2014)
Halil Kukner, Pieter Weckx, Sebastien Morrison, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. DSD (2014)
Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54 (9-10) (2014)
Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54 (9-10) (2014)
Geert Hellings, Shih-Hung Chen, Dimitri Linten, Mirko Scholz, Guido Groeseneken
Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies. CICC (2013)
Halil Kükner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. Microprocess. Microsystems 37 (8-A) (2013)
Said Hamdioui, Michael Nicolaidis, Dimitris Gizopoulos, Arnaud Grasset, Guido Groeseneken, Philippe Bonnot
Reliability challenges of real-time systems in forthcoming technology nodes. DATE (2013)
Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, H.-J. Na, Y. Son, K. B. Noh
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC (2013)
Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52 (9-10) (2012)
Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52 (9-10) (2012)
Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken, Cor Claeys, Felice Crupi
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC (2012)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20 (8) (2012)
Leqi Zhang, Stefan Cosemans, Dirk J. Wouters, Guido Groeseneken, Malgorzata Jurczak
Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write. ESSDERC (2012)
Halil Kukner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. DSD (2012)
Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC (2012)
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT (2012)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Mitsuhiro Togo, N. Horiguchi, Guido Groeseneken
Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. IEEE Trans. Circuits Syst. II Express Briefs (7) (2012)
P. C. Feijoo, Moonju Cho, Mitsuhiro Togo, E. San Andrés, Guido Groeseneken
Positive bias temperature instabilities on sub-nanometer EOT FinFETs. Microelectron. Reliab. 51 (9-11) (2011)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS (2011)
Sandeep Sangameswaran, Jeroen De Coster, Guido Groeseneken, Ingrid De Wolf
Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors. Microelectron. Reliab. 50 (9-11) (2010)
Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken, Willy M. C. Sansen, Stefaan Decoutere
Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design (2010)
Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49 (12) (2009)
R. Fernández-García, Ben Kaczer, Guido Groeseneken
A CMOS circuit for evaluating the NBTI over a wide frequency range. Microelectron. Reliab. 49 (8) (2009)
Mirko Scholz, Dimitri Linten, Steven Thijs, Sandeep Sangameswaran, Masanori Sawada, Toshiyuki Nakaei, Takumi Hasebe, Guido Groeseneken
ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool? IEEE Trans. Instrum. Meas. 58 (10) (2009)
Steven Thijs, Mototsugu Okushima, Jonathan Borremans, Philippe Jansen, Dimitri Linten, Mirko Scholz, Piet Wambacq, Guido Groeseneken
Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications. CICC (2008)
Guido Groeseneken, Ingrid De Wolf, A. J. Mouthaan, Jaap Bisschop
Editorial. Microelectron. Reliab. 48 (8-9) (2008)
Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, Montserrat Nafría
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE (2008)
M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectron. Reliab. 47 (6) (2007)
Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. 47 (4-5) (2007)
Bertrand Parvais, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken, Stefaan Decoutere
FinFET technology for analog and RF circuits. ICECS (2007)
A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken, Martin Kerber
Reliability screening of high-k dielectrics based on voltage ramp stress. Microelectron. Reliab. 47 (4-5) (2007)
A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, H. E. Maes, Guido Groeseneken, J. A. Kittl
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectron. Reliab. 47 (4-5) (2007)
David Trémouilles, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken
Transient voltage overshoot in TLP testing - Real or artifact? Microelectron. Reliab. 47 (7) (2007)
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken
FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. 46 (9-11) (2006)
Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46 (5-6) (2006)
Y.-L. Li, Zsolt Tokei, Philippe Roussel, Guido Groeseneken, Karen Maex
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability. Microelectron. Reliab. 45 (9-11) (2005)
Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, Guido Groeseneken, Marcel ter Beek
ESD circuit model based protection network optimisation for extended-voltage NMOS drivers. Microelectron. Reliab. 45 (9-11) (2005)
Vesselin K. Vassilev, Steven Thijs, P. L. Segura, Piet Wambacq, Paul Leroux, Guido Groeseneken, M. I. Natarajan, H. E. Maes, Michiel Steyaert
ESD-RF co-design methodology for the state of the art RF-CMOS blocks. Microelectron. Reliab. 45 (2) (2005)
Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken
RF ESD protection strategies - the design and performance trade-off challenges. CICC (2005)
Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44 (9-11) (2004)
Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, B.-J. Choi, Ann Concannon, J.-J. Yang, Guido Groeseneken, M. I. Natarajan, Marcel ter Beek, Peter Hopper, Michiel Steyaert, Herman E. Maes
A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits. Microelectron. Reliab. 44 (9-11) (2004)
Vesselin K. Vassilev, Snezana Jenei, Guido Groeseneken, Rafael Venegas, Steven Thijs, Vincent De Heyn, M. Natarajan Iyer, Michiel Steyaert, H. E. Maes
High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices. Microelectron. Reliab. 43 (7) (2003)
E. Andries, R. Dreesen, Kris Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken, K. F. Lo, Marc D'Olieslaeger, Jan D'Haen
Statistical aspects of the degradation of LDD nMOSFETs. Microelectron. Reliab. 42 (9-11) (2002)
Ben Kaczer, Robin Degraeve, Mahmoud Rasras, A. De Keersgieter, K. Van de Mieroop, Guido Groeseneken
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. 42 (4-5) (2002)
Bart Keppens, Vincent De Heyn, M. Natarajan Iyer, Vesselin K. Vassilev, Guido Groeseneken
Significance of the failure criterion on transmission line pulse testing. Microelectron. Reliab. 42 (6) (2002)
R. Dreesen, Kris Croes, Jean Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. Microelectron. Reliab. 41 (3) (2001)
Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem
Influence of gate length on ESD-performance for deep submicron CMOS technology. Microelectron. Reliab. 41 (3) (2001)
Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43 (3) (1999)
Donato Montanari, Jan Van Houdt, Guido Groeseneken, Herman E. Maes
Novel level-identifying circuit for flash multilevel memories. IEEE J. Solid State Circuits 33 (7) (1998)