DRC

Keyphrases

Publications

2023

Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023 DRC (2023)
Ankit Kumar, Arnab Pal, Kamyar Parto, Wei Cao, Kaustav Banerjee
Exploration and Exploitation of Strain Engineering in 2D-FETs. DRC (2023)
S. Shankar, Z. Hao, M. Hatefipour, W. Strickland, T. Shaw, J. Shabani
Josephson parametric amplifiers for rapid, high-fidelity measurement of solid-state qubits. DRC (2023)
Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs. DRC (2023)
Sung Jin Yang, Yuqian Gu, Deji Akinwande
Multifunctional Resistance Switching in Monolayer Hexagonal Boron Nitride Atomristor. DRC (2023)
Wenwen Li, Dong Ji
Small Signal Analysis of GaN IMPATT Diodes for W-band and Sub-THz Wave Generation. DRC (2023)
Solomon Amsalu Chekol, Rainer Waser, Susanne Hoffmann-Eifert
Controllability of Relaxation Behavior in Ag-based Diffusive Memristors. DRC (2023)
Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC (2023)
Shubham Mondal, Ding Wang, Jiangnan Liu, Yixin Xiao, Ping Wang, Zetian Mi
ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel. DRC (2023)
Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Joachim Knoch, Thomas Mikolajick, Jens Trommer
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell. DRC (2023)
Young-Eun Choi, Woo-Seok Kim, Myoung Kim, Min-Woo Ryu, Kyung Rok Kim
Low Power and High Density Ternary-SRAM for Always-on Applications. DRC (2023)
Zhongjie Ren, Hsien-Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Wassem, Wenjuan Zhu, Xiuling Li
$\beta$-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics. DRC (2023)
S. Ahmed, A. Islam, D. Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green
The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. DRC (2023)
Sijay Huang, Biswajit Ray
Overcoming the low cell current bottleneck of 3D NAND flash memory array with novel device design. DRC (2023)
Lingyan Shen, Xinhong Cheng, Li Zheng, Yuehui Yu
A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability. DRC (2023)
Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach
Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz. DRC (2023)
Daniel M. Fleetwood
Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes. DRC (2023)
Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios
First Demonstration of GaN RF HEMTs on Engineered Substrate. DRC (2023)
Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, Steve J. Pearton
Reproducible and High-Temperature Performance of NiO/ $\beta$-Ga2O3 Vertical Rectifiers in Achieving 8.9 kV Breakdown. DRC (2023)
A. Miesle, A. E. Islam, E. Shin, G. Subramanyam, Kevin D. Leedy, S. Ganguli, D. Dryden, Kyle J. Liddy, Kelson D. Chabak, Andrew J. Green
High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substrates. DRC (2023)
Kai Ni, Yi Xiao, Shan Deng, Vijaykrishnan Narayanan
Computational Associative Memory Powered by Ferroelectric Memory. DRC (2023)
Shivendra Singh Parihar, Simon Thomann, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch
5nm FinFET Cryogenic SRAM Evaluation for Quantum Computing. DRC (2023)
Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. DRC (2023)
Sumaiya Wahid, Lauren Hoang, Alwin Daus, Eric Pop
Up to 100-fold Improvement of Threshold Voltage Stability in ITO Transistors. DRC (2023)
Yifan Yao, Hongjian Li, PanPan Li, Christian J. Zollner, Michael Wang, Michael Iza, James S. Speck, Steven P. DenBaars, Shuji Nakamura
Size dependent characteristics of AlGaN-based ultraviolet micro-LEDs. DRC (2023)
Umeshwarnath Surendranathan, Horace Wilson, Biswajit Ray
Technology scaling effects on SRAM-PUF reliability under ionizing radiation. DRC (2023)
Bhaskaran Muralidharan
Quantum transport simulations for the next decade: Exploiting quantum topology in emerging 2D-devices. DRC (2023)
Yu Duan, Andy Xie, Patrick Fay
1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination. DRC (2023)
Tae Ryong Kim, Atanu K. Saha, Sumeet Kumar Gupta
Analysis of Polarization Switching in HZO/ZrO2 (HZZ) Nanolaminates based on Sub-lattice Phase-field Model. DRC (2023)
Marc Jaikissoon, Jung-Soo Ko, Eric Pop, Krishna C. Saraswat
Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal. DRC (2023)
Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay
Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz. DRC (2023)
Sebastian Lukas, Vikas Jangra, Nico Rademacher, Michael Gross, Eva Desgué, Maximilian Prechtl, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel-Lindner, Satender Kataria, Pierre Legagneux, Georg S. Duesberg, Max C. Lemme
Freely Suspended Platinum Diselenide Membranes without Polymer Support for Piezoresistive Pressure Sensing. DRC (2023)
Puneet Srivastava, David F. Brown, Louis Mt. Pleasant, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, John R. Jones, Wenhua Zhu, Hong M. Lu, Douglas M. Dugas, Kanin Chu
90 nm GaN Technology for Millimeter-Wave Power Applications to W-Band and Beyond. DRC (2023)
Olivier Maher, N. Harnack, Giacomo Indiveri, M. Sousa, Bernd Gotsmann, Siegfried F. Karg
Solving optimization tasks power-efficiently exploiting VO2's phase-change properties with Oscillating Neural Networks. DRC (2023)
F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. DRC (2023)
Suzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick, David Esseni, Francesco Driussi, Stefan Slesazeck
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. DRC (2023)
Renjith Sasikumar, K. Lakshmi Ganapathi, Durgamadhab Misra, Revathy Padmanabhan
Modeling of variability-aware memristive neural networks. DRC (2023)
Shamiul Alam, Adam N. McCaughan, Ahmedullah Aziz
Reconfigurable Superconducting Logic Using Multi-Gate Switching of a Nano-Cryotron. DRC (2023)
Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, Jincheng Zhang, Hong Zhou, Yue Hao
Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. DRC (2023)
Paula Palacios, Eros Reato, Mohamed Saeed, F. Pasadas, Zhenxing Wang, Max C. Lemme, Renato Negra
Fully Integrated Flexible RF Detectors in MoS2 and Graphene based MMIC. DRC (2023)
Cristian J. Herrera-Rodriguez, Atsushi Shimbori, Timothy A. Grotjohn
$\alpha$-Ga2O3/Diamond Heterojunction PN Diode: Device Fabrication and TCAD Modelling. DRC (2023)
Yue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm
$f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length. DRC (2023)
Logan Whitaker, Brian Markman, Mark J. W. Rodwell
Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications. DRC (2023)
Ashwani Kumar, Sai Sukruth Bezugam
RRAM Based On-Sensor Visual Data Preprocessing for Efficient Image Classification. DRC (2023)
Chunguang Wang, Jeffry Victor, Atanu K. Saha, X. Chen, M. Si, T. Sharma, K. Roy, P. D. Ye, Sumeet Kumar Gupta
FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy. DRC (2023)
Agata Piacentini, Dmitry K. Polyushkin, Burkay Uzlu, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan, Thomas Mueller, Max C. Lemme, Daniel Neumaier
Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2. DRC (2023)
Nicholas C. Miller, Matt Grupen, John D. Albrecht
Recent Advances in GaN HEMT Modeling using Fermi Kinetics Transport. DRC (2023)
Jeremiah Williams, Nolan S. Hendricks, Weisong Wang, Aaron Adams, Joshua Piel, Daniel Dryden, Kyle J. Liddy, Nicholas Sepelak, Bradley Morell, Adam Miesle, Ahmad Islam, Andrew J. Green
Ni/TiO2/ $\beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage. DRC (2023)
Shun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin
Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition. DRC (2023)
Yuan Xing, Feng Zhao
Natural Organic Fructose-based Nonvolatile Resistive Switching Memory for Environmental Sustainability in Computing. DRC (2023)