DRC

Keyphrases

Publications

2024

Sukhrob Abdulazhanov, Q. H. Le, David Lehninger, Ayse Sünbül, Thomas Kämpfe, G. Gerlach
Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications. DRC (2024)
Lukas Wind, A. Fuchsberger, Masiar Sistani, W. M. Weber
Three-Input Combinational Logic Gates based on Reconfigurable Si Field-Effect Transistors. DRC (2024)
Robert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop
Improved Mobility Extraction for Transistors with Gated Contacts. DRC (2024)
Luqi Zheng, Haitong Li
CMOS+X Technologies for Neuro-Vector-Symbolic Computing. DRC (2024)
Simon A. Agnew, William J. Scheideler
Enhancing Electrostatic Control of High-Speed Liquid-Metal-Printed In2O3 TFTs via Ga Doping. DRC (2024)
Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC (2024)
Y. Shin, W. Chern, N. Karaulac, A. Akinwande
Negative Differential Resistance Regime of Field Emitter Arrays. DRC (2024)
X. Wen, H. Kasai, K. Lee, M. Noshin, J. Chun, S. Chowdhury
First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET). DRC (2024)
Abhishek Kumar, Avirup Dasgupta
Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory Device. DRC (2024)
S. Roy, S. Pande, Masud Rana SK, Ela Bhattacharya, Bhaswar Chakrabarti
Demonstration of an oscillatory neuron using SiOx-based memristive switches. DRC (2024)
Shafin Bin Hamid, Asir Intisar Khan, Huairuo Zhang, Xiangjin Wu, Albert V. Davydov, Eric Pop
Energy-Efficient Spiking Neural Network Based on Ge4Sb6Te7 Phase-Change Memory Synapses. DRC (2024)
Junmo Lee, Sunbin Deng, Jungyoun Kwak, Minji Shon, Suman Datta, Shimeng Yu
Optimization of Backside of Silicon-Compatible High Voltage Superlattice Capacitor for 12V-to-6V On-Chip Voltage Conversion. DRC (2024)
Shivendra K. Rathaur, Abhisek Dixit, Edward Yi Chang
Investigation on Positive Bias-Induced Threshold Voltage Instability in GaN-on-Si D-mode Power MIS-HEMTs. DRC (2024)
Jyoti Patel, Navjeet Bagga, Vivek Kumar, S. Dasgupta
Small Signal Analysis of Nanosheet Transistor for sub-THz Frequency Considering Intersheet Capacitances and Modified Admittance Parameters. DRC (2024)
Hui-Ping Chang, Deji Akinwande, Jean Anne C. Incorvia
Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode. DRC (2024)
Mansura Sadek, Jesse T. Kemmerling, Ajay Kumar Visvkarma, Rian Guan, Yixin Xiong, Jianan Song, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Rongming Chu
2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching. DRC (2024)
Device Research Conference, DRC 2024, College Park, MD, USA, June 24-26, 2024 DRC (2024)
Nishant Saurabh, Paritosh Meihar, Shubham Patil, Udayan Ganguly
Ultra Low-Cost Epi-Gd2O3 MOSFET Based Novel 1T Frequency Detector. DRC (2024)
Bivek Bista, Jiaxuan Wen, Prafful Golani, Fengdeng Liu, Tristan Truttmann, Bharat Jalan, Steven Koester, Georges Pavlidis
3D Finite Thermal Modelling of SrSnO3 Field Effect Transistors. DRC (2024)
Ashwin Tunga, Junzhe Kang, Ziing Zhao, Ankit Shukla, Wenjuan Zhu, Shaloo Rakheja
Modeling of Content addressable memory using 2D Reconfigurable Transistors. DRC (2024)
J. A. Yang, Eros Reato, Theresia Knobloch, J.-S. Ko, Z. Zhang, Andrew J. Mannix, Krishna Saraswat, Tibor Grasser, Max Christian Lemme, Eric Pop
Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors. DRC (2024)
John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. DRC (2024)
Chao Tang, Koichi Tamura, Aoi Hamada, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Yuma Takida, Hiroaki Minamide, Tsung-Tse Lin, Akira Satou, Taiichi Otsuji
Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz Detection. DRC (2024)
Yuxin Du, Jesse T. Kemmerling, Jianan Song, Keisuke Shinohara, Vivek Mehrotra, Rongming Chu
Impact of P-GaN ohmic Contact Resistivity on Switching Time of GaN Super-Heterojunction FETs. DRC (2024)
Shisong Luo, Cheng Chang, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. DRC (2024)
Yue Ma, Xiaoyang Ma, Sigurd Wagner, Naveen Verma, James C. Sturm
Accurate and Compact Small-Signal Modeling of Zinc-Oxide Thin-Film Transistors for Operation in the GHz Regime. DRC (2024)
Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason P. Campbell, Christopher Chen, Hao-Yu Chien, Mau-Chung Frank Chang
A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout. DRC (2024)
Saikat Chakraborty, Jaydeep P. Kulkarni
Analyzing the Dynamics of Store Mechanism and Data Retention through Transient Simulations in Si/Ge TRAM for Cryogenic Memory Applications. DRC (2024)
Z. Hao, T. Shaw, M. Hatefipour, W. Strickland, B. H. Elfeky, D. Langone, J. Shabani, S. Shankar
Al-InAs Superconductor-Semiconductor Josephson Junction Parametric Amplifier. DRC (2024)
Sumaiya Wahid, Eric Pop
Oxygen Engineering for Positive Bias Stress Stability of Top-Gated Indium Tin Oxide (ITO) Transistors. DRC (2024)
Nitupon Dihingia, Aniket Sadashiva, Debanjan Bhowmik, Sandip Mondal
Spin-coated ALPO-RRAM with Switching Speed < 50 ns and Nonlinearity 0.5. DRC (2024)
Erbing Hua, Heba Abunahla, Georgi Gaydadjiev, Said Hamdioui, Ryoichi Ishihara
Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. DRC (2024)
Yiyang Bai, Amita Rawat, Lisa N. McPhillips, M. Saif Islam
P-on-N versus N-on-P Silicon-Avalanche Photodiode Selection for Visible and Near Infrared Wavelength Applications. DRC (2024)
Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Meng-Hsun Yu, Fan Ren, Honggyu Kim, Yu-Te Liao, Stephen J. Pearton
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers. DRC (2024)
Zili Tang, Mohammad Shafiqul Islam, Sigurd Wagner, Naveen Verma, James C. Sturm
Reduction of Series Resistance in Top-Gate ZnO Thin-Film Transistors by Air Exposure and Oxygen Plasma Treatment. DRC (2024)
Umeshwarnath Surendranathan, Farzana Hoque, Aleksandar Milenkovic, Biswajit Ray
Technology Scaling Effects on SRAM Data Remanence. DRC (2024)
Shunsuke Shitakata, Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori
Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation. DRC (2024)
Anthony Cabanillas, Hemendra Nath Jaiswal, Anindita Chakravarty, Asma Ahmed, Yu Fu, Chu Te Chen, Fei Yao, Huamin Li
Inherent Photogating in MoTe2 Transistors with Van der Waals Contacts. DRC (2024)
Daniele Nazzari, Lukas Wind, Dominik Mayr, Kihye Kim, Sebastian Lellig, Masiar Sistani, Walter M. Weber
Realization and characterization of HZO-based Schottky-Barrier FETs towards Logic-in-Memory applications. DRC (2024)
Quyen Tran, John Hayden, Joseph Casamento, Jon-Paul Maria, Thomas N. Jackson
Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel. DRC (2024)
Jiahao Chen, Kenneth Stephenson, Md Abdullah Mamun, Zehuan Wang, Parthasarathy Seshadri, Asif Khan, Chirag Gupta
Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V. DRC (2024)
Juhan Ahn, Saroj Satapathy, Jaydeep P. Kulkarni
Advancing Low-Voltage Complementary Reconfigurable Field-Effect Transistor Operation with Reduced Schottky Barriers. DRC (2024)
Jonathan Schuster, Michael A. Derenge, Jeremy L. Smith, Gregory A. Garrett, Daniel B. Habersat, Brenda VanMil, Dina M. Bower, Shahid Aslam, Tilak Hewagama, Michael Wraback, Anand V. Sampath
NUV-Enhanced 4H-SiC SACM APDs. DRC (2024)
S. Ghosh, A. Echresh, M. B. Khan, D. Bhattacharya, U. Kentsch, Slawomir Prucnal, V. Vardhan, S. Biswas, S. Hellebust, J. Wenger, J. D. Holmes, Artur Erbe, Yordan M. Georgiev
Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application. DRC (2024)
Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. DRC (2024)
Mukul Kumar, Kuang-Yu Hsueh, Yun-Jie Huang, Chao-Hsin Wu
A Darlington Transistor Using Cascaded n-p-n Light-Emitting Transistors for Temperature Sensor Applications. DRC (2024)
Shiva T. Konakanchi, Pramey Upadhyaya
Characterizing Probabilistic Bits with Quantum Spin Defects. DRC (2024)
Faiyaz E. Mullick, Rahul Sreekumar, Md Golam Morshed, Samiran Ganguly, Mircea Stan, Avik W. Ghosh
Double magnetic tunnel junction based ∑Δ∑ hardware neuron. DRC (2024)
Xiangjin Wu, Asir Intisar Khan, H.-S. Philip Wong, Eric Pop
Optimizing TiTe2/Ge4Sb6Te7 Superlattices Towards Low-Power, Fast-Speed, and High-Stability Phase Change Memory. DRC (2024)
Boyu Wang, Kamruzzaman Khan, Emre Akso, Henry Collins, Tanmay Chavan, Matthew Guidry, Umesh K. Mishra
Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth. DRC (2024)