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GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C.
Shisong Luo
Cheng Chang
Qingyun Xie
Tao Li
Mingfei Xu
Ziyi He
Tomás Palacios
Yuji Zhao
Published in:
DRC (2024)
Keyphrases
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structuring elements
high density
social networks
integrated circuit
real time
data sets
decision making
power consumption
mathematical morphology
databases
information retrieval
artificial neural networks
image analysis
gray scale
low power