Tomás Palacios

Publication Activity (10 Years)

Years Active: 2006-2024
Publications (10 Years): 18

Top Topics

Electronic Devices

High Temperature

Schottky Barrier

Top Venues

Publications

Shisong Luo, Cheng Chang, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. DRC (2024)
Deniz Umut Yildirim, Jaeyoung Jung, Amr Elsakka, Giuseppe Moschetti, Miguel M. Lopez, Jonas Hansryd, Tomás Palacios, Anantha P. Chandrakasan
3.5GHz, -31 dBm Sensitivity Batteryless 5G Energy Harvester Backscattering Chip for Asset Identification in IoT-Enabled Warehouses. CICC (2024)
John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. DRC (2024)
Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios
Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. VLSI Technology and Circuits (2023)
Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios
First Demonstration of GaN RF HEMTs on Engineered Substrate. DRC (2023)
Yiyue Luo, Kui Wu, Andrew Spielberg, Michael Foshey, Daniela Rus, Tomás Palacios, Wojciech Matusik
Digital Fabrication of Pneumatic Actuators with Integrated Sensing by Machine Knitting. CHI (2022)
Yiyue Luo, Kui Wu, Tomás Palacios, Wojciech Matusik
KnitUI: Fabricating Interactive and Sensing Textiles with Machine Knitting. CHI (2021)
Yiyue Luo, Yunzhu Li, Michael Foshey, Wan Shou, Pratyusha Sharma, Tomás Palacios, Antonio Torralba, Wojciech Matusik
Intelligent Carpet: Inferring 3D Human Pose From Tactile Signals. CVPR (2021)
Joshua A. Perozek, Ahmad Zubair, Tomás Palacios
Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz. DRC (2021)
Nadim Chowdhury, Jaeyoung Jung, Qingyun Xie, Mengyang Yuan, Kai Cheng, Tomás Palacios
Performance Estimation of GaN CMOS Technology. DRC (2021)
Girish Rughoobur, J. Zhao, Lay Jain, Ahmad Zubair, Tomás Palacios, J. Kong, Akintunde Ibitayo Akinwande
Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors. DRC (2020)
Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomás Palacios
Materials and Technology Issues for the Next Generation of Power Electronic Devices. DRC (2020)
Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios
GaN Nanowire Field Emitters with a Self-Aligned Gate Process. DRC (2020)
Ahmad Zubair, Joshua A. Perozek, J. Niroula, O. Aktas, V. Odnoblyudov, Tomás Palacios
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. DRC (2020)
Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. (2018)
Charles Mackin, Elaine McVay, Tomás Palacios
Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors. Sensors 18 (2) (2018)
Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios
Degradation of vertical GaN FETs under gate and drain stress. IRPS (2018)
Eyal Aklimi, Daniel Piedra, Kevin Tien, Tomás Palacios, Kenneth L. Shepard
Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter. IEEE J. Solid State Circuits 52 (6) (2017)
M. P. King, J. R. Dickerson, S. DasGupta, Matthew J. Marinella, R. J. Kaplar, Daniel Piedra, Min Sun, Tomás Palacios
Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. IRPS (2015)
Elias Towe, Tomás Palacios, Maki Suemitsu
Emerging graphene-based electronic & photonic devices, circuits, and systems [Scannning the Issue]. Proc. IEEE 101 (7) (2013)
Allen Hsu, Han Wang, Yong Cheol Shin, Benjamin Mailly, Xu Zhang, Lili Yu, Yumeng Shi, Yi Hsien Lee, Madan Dubey, Ki Kang Kim, Jing Kong, Tomás Palacios
Large-Area 2-D Electronics: Materials, Technology, and Devices. Proc. IEEE 101 (7) (2013)
Nick L. Marcoux, Christopher J. Fisher, Doug White, John Lachapelle, Tomás Palacios, Omair Saadat, Sameer Sonkusale
A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers. MWSCAS (2012)
Daniel Piedra, Hyung-Seok Lee, Tomás Palacios, Xiang Gao, Shiping Guo
Scaling of InAlN/GaN power transistors. ESSDERC (2012)
Tomás Palacios, Allen Hsu, Han Wang
Applications of graphene devices in RF communications. IEEE Commun. Mag. 48 (6) (2010)
Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. Microelectron. Reliab. 50 (6) (2010)
Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. (7) (2006)