Umesh K. Mishra

Publication Activity (10 Years)

Years Active: 1992-2024
Publications (10 Years): 12

Top Topics

Rotation Invariant

Gallium Arsenide

Top Venues

Publications

Boyu Wang, Kamruzzaman Khan, Emre Akso, Henry Collins, Tanmay Chavan, Matthew Guidry, Umesh K. Mishra
Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth. DRC (2024)
Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS (2024)
Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. DRC (2023)
Umesh K. Mishra
Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply. Proc. IEEE 111 (4) (2023)
Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura
Short-Circuit Capability with GaN HEMTs : Invited. IRPS (2022)
Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS (2021)
Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. DRC (2020)
Wenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. DRC (2020)
Rohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller
Virtual-Source Modeling of N-polar GaN MISHEMTS. BCICTS (2019)
Shalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra
Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction. DRC (2019)
Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS (2019)
Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, YiFeng Wu, Likun Shen, Kurt Smith, Dixie Dunn, Saurabh Chowdhury, Peter Smith, John Gritters, Lee McCarthy, Ronald Barr, Rakesh Lal, Umesh K. Mishra, Primit Parikh
Commercialization and reliability of 600 V GaN power switches. IRPS (2015)
Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectron. Reliab. 51 (2) (2011)
Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides
-rich conditions. Microelectron. Reliab. 51 (2) (2011)
Umesh K. Mishra, Likun Shen, Thomas E. Kazior, YiFeng Wu
GaN-Based RF Power Devices and Amplifiers. Proc. IEEE 96 (2) (2008)
Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. (7) (2006)
Umesh K. Mishra, Primit Parikh, YiFeng Wu
AlGaN/GaN HEMTs-an overview of device operation and applications. Proc. IEEE 90 (6) (2002)
Karthikeyan Krishnamurthy, Ramakrishna Vetury, Stacia Keller, Umesh K. Mishra, Mark J. W. Rodwell, Stephen I. Long
Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers. IEEE J. Solid State Circuits 35 (9) (2000)
Thomas J. Jenkins, Lois T. Kehias, Primit Parikh, James Ibbetson, Umesh K. Mishra, Daniel Docter, Minh Le, Joe Pusl, Duncan Widman
Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology. IEEE J. Solid State Circuits 34 (9) (1999)
Loi D. Nguyen, Lawrence E. Larson, Umesh K. Mishra
Ultra-high speed modulation-doped field-effect transistors: a tutorial review. Proc. IEEE 80 (4) (1992)