Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.
Marco SaroFrancesco de PieriAndrea CarlottoMirko FornasierFabiana RampazzoCarlo De SantiGaudenzio MeneghessoMatteo MeneghiniEnrico ZanoniDavide BisiMatthew GuidryStacia KellerUmesh K. MishraPublished in: IRPS (2024)