Stacia Keller

Publication Activity (10 Years)

Years Active: 2000-2024
Publications (10 Years): 7

Top Topics

Fourier Transform

Rotation Invariant

Top Venues

Publications

Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS (2024)
Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. DRC (2023)
Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS (2021)
Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. DRC (2020)
Wenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. DRC (2020)
Rohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller
Virtual-Source Modeling of N-polar GaN MISHEMTS. BCICTS (2019)
Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS (2019)
Karthikeyan Krishnamurthy, Ramakrishna Vetury, Stacia Keller, Umesh K. Mishra, Mark J. W. Rodwell, Stephen I. Long
Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers. IEEE J. Solid State Circuits 35 (9) (2000)