IRPS

Keyphrases

Publications

2023

Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. IRPS (2023)
Rakesh Ranjan, Pavitra Ramadevi Perepa, Ki-Don Lee, Hokyung Park, Peter Kim, Ganesh Chakravarthy Yerubandi, Jon Haefner, Caleb Dongkyun Kwon, Minjung Jin, Wenhao Zhou, Hyewon Shim, Shin-Young Chung
Impact of Barrier Metal Thickness on SRAM Reliability. IRPS (2023)
Huimei Zhou, Miaomiao Wang, Nicolas Loubet, Andrew Gaul, Yasir Sulehria
Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices. IRPS (2023)
Simon Thomann, Albi Mema, Kai Ni, Hussam Amrouch
Reliable FeFET-based Neuromorphic Computing through Joint Modeling of Cycle-to-Cycle Variability, Device-to-Device Variability, and Domain Stochasticity. IRPS (2023)
Chao-Yang Ke, Yu-Chia Tsui, Bing-Yue Tsui, Ming-Dou Ker
Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and UIS Test Methods. IRPS (2023)
Christian Schwabe, Xing Liu, Tobias N. Wassermann, Paul Salmen, Thomas Basler
SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation. IRPS (2023)
J. Tan, J. H. Lim, Jae Hyun Kwon, Vinayak Bharat Naik, Nagarajan Raghavan, Kin Leong Pey
Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation. IRPS (2023)
Taiki Uemura, Byungjin Chung, Shin-Young Chung, Seungbae Lee, Yuchul Hwang, Sangwoo Pae
Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM. IRPS (2023)
Simon Van Beek, Kaiming Cai, Kaiquan Fan, Giacomo Talmelli, Anna Trovato, Nico Jossart, Siddharth Rao, Adrian Vaisman Chasin, Sebastien Couet
MTJ degradation in multi-pillar SOT-MRAM with selective writing. IRPS (2023)
Hossein Sarbishaei, Vladislav A. Vashchenko
ESD Avalanche Diodes Degradation in EOS Regime. IRPS (2023)
SungMan Rhee, Hyunjin Kim, Sangku Park, Taiki Uemura, Yuchul Hwang, Seungjin Choo, Jinju Kim, Hwasung Rhee, Shin-Young Chung
Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk. IRPS (2023)
Ryan Lu, Yao-Chun Chuang, Jyun-Lin Wu, Jun He
Reliability Challenges from 2.5D to 3DIC in Advanced Package Development. IRPS (2023)
Shudong Huang, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Jean-Jacques Hajjar, Elyse Rosenbaum
Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology. IRPS (2023)
Elena Mengotti, Enea Bianda, David Baumann, Gerd Schlottig, Francisco Canales
Industrial approach to the chip and package reliability of SiC MOSFETs (Invited). IRPS (2023)
S. Q. Zhang, Y. S. Sun, D. Gao, H. Jiang, Z. Q. Yu, H. Zheng, J. L. Huang
Investigation of Channel Dimension Dependence of BTI Degradation and Variation in Planar HKMG MOSFET. IRPS (2023)
Hyeongseok Oh, Myungsun Chun, Jiwon Lee, Shi-Jie Wen, Nick Yu, Byung-Gun Park, Sanghyeon Baeg
Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components. IRPS (2023)
Weiman Yan, Ernest Wu, Alexander G. Schwing, Elyse Rosenbaum
Semantic Autoencoder for Modeling BEOL and MOL Dielectric Lifetime Distributions. IRPS (2023)
P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik
RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications. IRPS (2023)
Y. L. Yang, P. C. Tsao, C. W. Lin, Ross Lee, Olivia Ni, T. T. Chen, Y. J. Ting, C. T. Lai, Jason Yeh, Arnold Yang, Wayne Huang, Peng Chen, Charly Tsai, Ryan Yang, Y. S. Huang, B. C. Hsu, M. Z. Lee, T. H. Lee, Michael Huang, Coming Chen, Liham Chu, H. W. Kao, N. S. Tsai
Performing Machine Learning Based Outlier Detection for Automotive Grade Products. IRPS (2023)
Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. IRPS (2023)
Rajarshi Roy Chaudhuri, Vipin Joshi, Amratansh Gupta, Tanmay Joshi, Rasik Rashid Malik, Mehak Ashraf Mir, Sayak Dutta Gupta, Mayank Shrivastava
Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. IRPS (2023)
Kang Yang, Suhui Yang, Yan Ouyang, Shengwei Yang, Kun Han, Yi He
Stress Migration of Aluminum Backside Interconnect in Xtacking®. IRPS (2023)
Jason Jopling
Risk Management Informed by an Uncertain Bathtub Curve (Invited). IRPS (2023)
Xinyi Zhang, Kewei Wang, Fang Wang, Jiangjiang Li, Zhicheng Wu, Duoli Li, Bo Li, Jianhui Bu, Zhengsheng Han
Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET. IRPS (2023)
N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IRPS (2023)
Balaji Narasimham, H. Luk, C. Paone, A-R. Montoya, T. Riehle, Mike Smith, Liming Tsau
Scaling Trends and the Effect of Process Variations on the Soft Error Rate of advanced FinFET SRAMs. IRPS (2023)
Jiyoung Yoon, Bumgi Lee, Jaehee Song, Bokyoung Kang, Sangho Lee, Doh-Soon Kwak, Heonsang Lim, Ilsang Park, Jonghoon Kim, Sangwoo Pae
Customized wafer level verification methodology: quality risk pre-diagnosis with enhanced screen-ability of stand-by stress-related deteriorations. IRPS (2023)
Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Ansh, Mayank Shrivastava
Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs. IRPS (2023)
In-Hwan Ji, Anoop Mathew, Jae-Hyung Park, Neal Oldham, Matthew McCain, Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, Donald A. Gajewski, John W. Palmour
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. IRPS (2023)
Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS (2023)
Emmanuel Bender, Joseph B. Bernstein, Duane S. Boning
The Effects of Process Variations and BTI in Packaged FinFET Devices. IRPS (2023)
Yue Xi, Xinyi Li, Junhao Chen, Ruofei Hu, Qingtian Zhang, Zhixing Jiang, Feng Xu, Jianshi Tang
Reliability of Memristive Devices for High-Performance Neuromorphic Computing: (Invited Paper). IRPS (2023)
Marek Skowronski
Material instabilities in the TaOx-based resistive switching devices (Invited). IRPS (2023)
Yueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori
GaN HEMTs Design and Modeling for 5G. IRPS (2023)
J. Hai, Florian Cacho, X. Federspiel, Tidjani Garba-Seybou, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould
Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation. IRPS (2023)
Jatin, M. Monishmurali, Mayank Shrivastava
Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices. IRPS (2023)
Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh
Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. IRPS (2023)
Xinyi Xu, Hongchao Zhang, Chuanpeng Jiang, Jinhao Li, Shiyang Lu, Yunpeng Li, Honglei Du, Xueying Zhang, Zhaohao Wang, Kaihua Cao, Weisheng Zhao, Shuqin Lyu, Hao Xu, Bonian Jiang, Le Wang, Bowen Man, Cong Zhang, Dandan Li, Shuhui Li, Xiaofei Fan, Gefei Wang, Hong-xi Liu
Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays. IRPS (2023)
William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, E. Nowak, A. Constant, Ferdinando Iucolano
Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). IRPS (2023)
Rasik Rashid Malik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mehak Ashraf Mir, Zubear Khan, Avinas N. Shaji, Madhura Bhattacharya, Anup T. Vitthal, Mayank Shrivastava
Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. IRPS (2023)
Milan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung Bae Kim, Dong Kil Yim, Luca Larcher
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. IRPS (2023)
X. Federspiel, A. Griffon, M. Barlas, P. Lamontagne
Effect of Frequency on Reliability Of High-K MIM Capacitors. IRPS (2023)
Rachael J. Parker, Jyothi Bhaskarr Velamala, Kuan-Yueh James Shen, David Johnston, Yao-Feng Chang, Stephen M. Ramey, Siang-jhih Sean Wu, Padma Penmatsa
A Physical Unclonable Function Leveraging Hot Carrier Injection Aging. IRPS (2023)
Pradeep Lall, Ved Soni, Guneet Sethi, Kok Yiang
Estimation of SOH Degradation of Coin Cells Subjected to Accelerated Life Cycling with Randomized Cycling Depths and C-Rates. IRPS (2023)
P. C. Chang, P. J. Liao, C. H. Wu, Y. C. Chang, D. H. Hou, Elia Ambrosi, H. Y. Lee, J. H. Lee, X. Y. Bao
A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching Operation. IRPS (2023)
K. Joshi, D. Nminibapiel, M. Ghoneim, D. Ali, R. Ramamurthy, L. Pantisano, Inanc Meric, Stephen Ramey
A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies. IRPS (2023)
Patrick Fiorenza, Francesco Cordiano, Mario Santo Alessandrino, Alfio Russo, Edoardo Zanetti, Mario Saggio, C. Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs. IRPS (2023)
L. Cattaneo, Matteo Baldo, Nicola Lepri, F. Sancandi, Massimo Borghi, Elisa Petroni, A. Serafini, R. Annunziata, Andrea Redaelli, Daniele Ielmini
Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM). IRPS (2023)
M. Y. Li, J. P. Lee, C. H. Liu, J. C. Guo, Steve S. Chung
Endurance and Excellent Retention. IRPS (2023)
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs. IRPS (2023)