Uwe Schroeder

Publication Activity (10 Years)

Years Active: 2007-2024
Publications (10 Years): 13

Top Topics

Content Addressable

Electron Microscopy

Security Protection

Top Venues

Publications

Pramoda Vishnumurthy, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Luis Azevedo Antunes, Alfred Kersch
Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). IRPS (2024)
Xiwen Liu, Keshava Katti, Yunfei He, Paul Jacob, Claudia Richter, Uwe Schroeder, Santosh Kurinec, Pratik Chaudhari, Deep Jariwala
Analog Content-Addressable Memory from Complementary FeFETs. CoRR (2023)
Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide. DRC (2022)
Ruben Alcala, Furqan Mehmood, Pramoda Vishnumurthy, Terence Mittmann, Thomas Mikolajick, Uwe Schroeder
Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance. IMW (2022)
Halid Mulaosmanovic, Patrick D. Lomenzo, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, Benjamin Max
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. IRPS (2021)
Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Hideki Maemura, Yusuke Shuto, Fumitaka Sugaya, Monica Materano, Tarek Ali, Maximilian Lederer, Kati Kühnel, Konrad Seidel, Uwe Schroeder, Thomas Mikolajick, Masanori Tsukamoto, Taku Umebayashi
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application. IMW (2021)
Thomas Mikolajick, Halid Mulaosmanovic, Michael Hoffmann, Benjamin Max, T. Mittmann, Uwe Schroeder, Stefan Slesazeck
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. DRC (2019)
Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder, Benjamin Max
memories: device reliability and depolarization fields. NVMTS (2019)
Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick
Embedding hafnium oxide based FeFETs in the memory landscape. ICICDT (2018)
Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. NVMTS (2017)
Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe, L. M. Eng, Thomas Mikolajick, Uwe Schroeder
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. ESSDERC (2017)
Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf van Bentum, Alfred Kersch, C. Künneth, Thomas Mikolajick
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC (2016)
Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Bottger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. ESSDERC (2016)
Tony Schenk, Stefan Mueller, Uwe Schroeder, Robin Materlik, Alfred Kersch, Mihaela Popovici, Christoph Adelmann, Sven Van Elshocht, Thomas Mikolajick
Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. ESSDERC (2013)
Rainer Duschl, Martin Kerber, A. Avellan, S. Jakschik, Uwe Schroeder, S. Kudelka
Reliability aspects of Hf-based capacitors: Breakdown and trapping effects. Microelectron. Reliab. 47 (4-5) (2007)