Impact of field cycling on HfO2 based non-volatile memory devices.
Uwe SchroederMilan PesicTony SchenkHalid MulaosmanovicStefan SlesazeckJohannes OckerClaudia RichterEkaterina YurchukK. KhullarJohannes MüllerPatrick PolakowskiE. D. GrimleyJ. M. LeBeauStefan FlachowskyS. JansenSabine KolodinskiRalf van BentumAlfred KerschC. KünnethThomas MikolajickPublished in: ESSDERC (2016)