Milan Pesic

Publication Activity (10 Years)

Years Active: 2016-2024
Publications (10 Years): 16

Top Venues

IRPS

ESSDERC

IMW

DRC

Dresden University of Technology, Germany (PHD)

Education History

Dresden University of Technology, Germany

PHD

Publications

Andrea Palmieri, Mahdi Tavakoli, Chi Ching, Wenkai Zheng, Shi You, Xiaodong Zhang, Davide Cornigli, Michael Haverty, Navneet Singh, Luca Larcher, Monika Jamieson, Ajay Bhatnagar, Alexander Jansen, Max Gage, Jianshe Tang, Sameer Deshpande, Brian Brown, Arun Srivatsa, Mehul Naik, Bo Xie, Jerry Gelatos, Joung Joo Lee, Xianmin Tang, Gaurav Thareja, Milan Pesic
Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL. IRPS (2024)
Bastien Beltrando, Marco A. Villena, Mondol Anik Kumar, Shruba Gangopadhyay, Deepak Kamalanathan, E. Smith, N. Kazem, Ghazal Saheli, Stephen Weeks, Michael Haverty, Muthukumar Kaliappan, Andrea Padovani, S. Krishnan, J. Anthis, Luca Larcher, Milan Pesic
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. IMW (2024)
Tommaso Rollo, Hansel Lo, Luca Larcher, Christopher Olsen, Milan Pesic
Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study. IRPS (2024)
Bastien Beltrando, Bruno Coppolelli, Jung-Bae Kim, Yang Ho Bae, Stephen Weeks, Lisa Enman, Ghazal Saheli, Davide Cornigli, Stuart Brinkley, Mark Saly, Luca Larcher, Dong Kil Yim, Milan Pesic
Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors. IRPS (2024)
Milan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung Bae Kim, Dong Kil Yim, Luca Larcher
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. IRPS (2023)
Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging. IRPS (2023)
Milan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam-Sung Kim, Luca Larcher
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. IRPS (2022)
Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). IRPS (2022)
Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. IMW (2022)
Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger
Variability sources and reliability of 3D - FeFETs. IRPS (2021)
Felix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann, Thomas Mikolajick, Johann W. Bartha
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors. DRC (2019)
Andrea Padovani, Milan Pesic, Mondol Anik Kumar, Pieter Blomme, Alexandre Subirats, Senthil Vadakupudhupalayam, Zunaid Baten, Luca Larcher
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. IRPS (2019)
Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. NVMTS (2017)
Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe, L. M. Eng, Thomas Mikolajick, Uwe Schroeder
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. ESSDERC (2017)
Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf van Bentum, Alfred Kersch, C. Künneth, Thomas Mikolajick
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC (2016)
Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Bottger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. ESSDERC (2016)

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Publication Activity (10 Years)

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Milan Pesic