IMW

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Publications

2024

Boncheol Ku, Jae-Min Sim, Jae Seok Hur, Jae Kyeong Jeong, Yun-Heub Song, Changhwan Choi
A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation. IMW (2024)
Wei-Chih Chien, C. L. Sung, Robert L. Bruce, C. W. Yeh, H. Y. Cheng, Z. L. Liu, E. K. Lai, C. W. Cheng, J. X. Zheng, A. Grun, A. Ray, D. Daudelin, H. Y. Ho, Matthew BrightSky, H. L. Lung
A Novel Program-verify Free and Low Drift Multilevel Operation on Cross-point OTS-PCM for In-Memory Computing Application. IMW (2024)
Hao-Ling Tang, Insoo Jung, Frank CC Chin, Luc Thomas, Xin Meng, Arvind Kumar, Jaesoo Ahn, Zuoming Zhu, Abhishek Dube, Mahendra Pakala
Demonstration of High-Growth-Rate Epitaxially Grown Si Channel on 3D NAND Test Vehicle with Memory Functionality. IMW (2024)
Fu-Chang Hsu, Richard J. Huang, Re-Peng Tsay, Jui-Hsin Chang, Chia-Haur Chang, I-Wei Huang, Kevin Hsu
3D X-DRAM: A Novel 3D NAND-like DRAM Cell and TCAD Simulations. IMW (2024)
Po-Hao Tseng, Shao-Yu Fang, Yu-Hsuan Lin, Feng-Ming Lee, Jhe-Yi Liao, Yu-Yu Lin, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
3D-NAND based Filtering Cube with High Resolution 2D Query and Tunable Feature Length for Computational SSD. IMW (2024)
Hitomi Tanaka, Hajime Sano, Reika Ichihara, Yuta Aiba, Kazuma Hasegawa, Kana Kudo, Chieko Tokunaga, Yasuhito Yoshimizu, Fumie Kikushima, Tomoya Sanuki
Overcome the End of Life of 3D Flash Memory by Recovery Annealing, Aiming for Carbon Neutrality in Semiconductor Manufacturing. IMW (2024)
Bastien Beltrando, Marco A. Villena, Mondol Anik Kumar, Shruba Gangopadhyay, Deepak Kamalanathan, E. Smith, N. Kazem, Ghazal Saheli, Stephen Weeks, Michael Haverty, Muthukumar Kaliappan, Andrea Padovani, S. Krishnan, J. Anthis, Luca Larcher, Milan Pesic
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. IMW (2024)
Hang-Ting Lue, Wei-Chen Chen, Yu-Tang Lin, Keh-Chung Wang, Chih-Yuan Lu
DRAM Below Equivalent 10nm Node. IMW (2024)
Zhongkui Zhang, Xiaofei Fan, Danrong Xiong, Huiyan Sun, Xiantao Shang, Bowen Man, Cong Zhang, Shuhui Li, Renjie Su, Chengyuan Sun, Jennifer Zhou, Hongxi Liu, Gefei Wang
Process optimization and cryogenic evaluation of spin-orbit torque magnetic random access memory. IMW (2024)
Jun Yu, Jiawei Fu, Candong Zhao, Fuwei Zhuge, Qi Chen, Yuhui He, Xiangshui Miao
High Operation Speed(10ns/100ns) and Low Read Current (sub-1μA) 2D Floating Gate Transistor. IMW (2024)
Tae-Hyeon Kim, Yuan-Chun Luo, Omkar Phadke, James Read, Shimeng Yu
Engineering nvCap From FEOL to BEOL with Ferroelectric Small-signal Non-destructive Read. IMW (2024)
Ashonita Chavan, Adharsh Rajagopal, Yixin Yan, Isamu Asano, Devanarayanan Ettisserry, Vassil Antonov, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy
Materials Engineering for High Performance Ferroelectric Memory. IMW (2024)
Sven Beyer, Dominik Kleimaier, Stefan Dünkel, Halid Mulaosmanovic, Steven Soss, Johannes Müller, Zhouhang Jiang, Kai Ni, Thomas Mikolajick, Haidi Zhou
Charge trapping challenges of CMOS embedded complementary FeFETs. IMW (2024)
Daniel Schön, Stephan Menzel
Understanding the Thermal Aspects in Dense RRAM Memory Arrays. IMW (2024)
Taras Ravsher, Andrea Fantini, Kruti Trivedi, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Jan Van Houdt, Valeri Afanas'ev, Kurt Wostyn, Sebastien Couet, Gouri Sankar Kar
Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification. IMW (2024)
Dasom Lee, Tsu-Jae King Liu
SiGe/Si Heterojunction Drain Transistor for Faster 3D NAND Flash Memory Erase. IMW (2024)
Xi-Wei Lin, Salvatore M. Amoroso, Ko-Hsin Lee, Meng Hsuan Ke, Tue Gunst, Pavel Tikhomirov, Plamen Asenov
Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development. IMW (2024)
Pratik B. Vyas, Ashish Pal, Gregory Costrini, Benjamin Colombeau, Bala Haran, Subi Kengeri, El Mehdi Bazizi
Gate-All-Around SRAM: Performance Investigation and Optimization Towards Vccmin Scaling. IMW (2024)
IEEE International Memory Workshop, IMW 2024, Seoul, Republic of Korea, May 12-15, 2024 IMW (2024)
Karansingh Thakor, Nikhil Rangarajan, Himanshu Diwakar, Rashmi Saikia, Tarun Samadder, Souvik Mahapatra, Shyam Raghunathan, Yingda Dong
Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories. IMW (2024)
Wei-Chen Chen, Hang-Ting Lue, Ming-Hung Wu, Yu-Tang Lin, Keh-Chung Wang, Chih-Yuan Lu
Improved 3D DRAM Design Based on Gate-Controlled Thyristor Featuring Two Asymmetrical Horizontal WL's and Vertical BL for Better Cell Size Scaling and Array Selection. IMW (2024)
Yu Li, Hao Jiang, Jie Yu, Xuanyu Zhao, Xiaodong Wang, Qihan Liu, Yingfen Wei, Qi Liu, Ming Liu
High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications. IMW (2024)
Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW (2024)
Ralf Richter, Stefan Dünkel, Bert Müller, Frank Mauersberger, Sven Wittek, Sven Beyer, Jana Böhme, Uwe Ritter, Violetta Sessi, Zhen Xu, Maximilian Drescher, Jinho Kim, Parviz Ghazavi, Yuri Tkachev, Latt Tee, Zonglin Li, Mandana Tadayoni, Fan Luo, Nhan Do, Serguei Jourba, Catherine Decobert, Gilles Festes, Bruno Villard, Thibaut Pate-Cazal
Performance and Reliability of Technology Qualified 34 Mb Split-Gate eFLASH Macro in 28 nm HKMG. IMW (2024)
Gaurav Mehta, Jonathan Abdilla, Raymond Hung, El Mehdi Bazizi, Yong Chang Bum, Djuro Bikajlevic, Liu Jiang, Gregory Costrini
D2W Hybrid Bonding Challenges for HBM. IMW (2024)
Won-Tae Koo, Jae-Gil Lee, Gunhee Lee, Woocheol Lee, Jungwook Woo, Dong Ik Suh, Joongsik Kim, Hyung Dong Lee, Seho Lee, Jaeyun Yi, Seonyong Cha
Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell. IMW (2024)
Kwiwook Kim, Myeong-Jae Park
Present and Future, Challenges of High Bandwith Memory (HBM). IMW (2024)
Olivier Billoint, Simon Martin, J. Laguerre, L. Hosier, Jean Coignus, Catherine Carabasse, François Andrieu, Laurent Grenouillet
Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations. IMW (2024)
Noboru Shibata, Hironori Uchikawa, Taira Shibuya, Hirofumi Inoue
Novel Multi-Level Coding and Architecture Enabling Fast Random Access for Flash Memory. IMW (2024)
Yuan He, Chengxiang Ma, Xiangchao Ma, Yilong Huang, Qianze Zheng, Yue Xi, Qiumeng Wei, Jianing Li, Xiaodong He, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Jianshi Tang, Bin Gao, Dong Wu, He Qian, Huaqiang Wu
A 3.75Mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology. IMW (2024)
Hiraki Inoue, Takeya Hirose, Toshiki Mizuguchi, Yusuke Komura, Toshihiko Saito, Minato Ito, Kiyotaka Kimura, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake, Takanori Matsuzaki, Hajime Kimura, Makoto Ikeda, Shunpei Yamazaki
Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM. IMW (2024)
S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. IMW (2024)
W. Kim, V. Pica, N. Jossart, Farrukh Yasin, Kurt Wostyn, S. Couet, Sidharth Rao
A novel test and analysis scheme to elucidate tail bit characteristics in STT-MRAM arrays. IMW (2024)
Ryota Katsumata
Flash memory revolution: journey from 2D to 3D, migrating to modular memory fabrication. IMW (2024)
Naoko Misawa, Tao Wang, Chihiro Matsui, Ken Takeuchi
Embedded Transformer Hetero-CiM: SRAM CiM for 4b Read/Write-MAC Self-attention and MLC ReRAM CiM for 6b Read-MAC Linear&FC Layers. IMW (2024)
Dipjyoti Das, Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chem, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan
Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation. IMW (2024)
Saifei Dai, Songwei Li, Shuangshuang Xu, Fengbin Tian, Junshuai Chai, Jiahui Duan, Wenjuan Xiong, Jinjuan Xiang, Yanrong Wang, Hao Xu, Jing Zhang, Xiaolei Wang, Wenwu Wang
Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors. IMW (2024)
Youngjae Kwon, Won-Tae Koo, Sangsu Park, Dong Ik Suh, Gunhee Lee, Hyung Dong Lee, Youngbae Ahn, Dohee Kim, Seungwook Ryu, Hoseok Em, Seokjoon Kang, Chang Won Jeong, Junho Cheon, Hyejung Choi, Soo Gil Kim, Seho Lee, Jaeyun Yi, Seonyong Cha
Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays. IMW (2024)
Daewon Ha, Y. Lee, S. Yoo, W. Lee, M. H. Cho, K. Yoo, S. M. Lee, S. Lee, M. Terai, T. H. Lee, J. H. Bae, K. J. Moon, C. Sung, M. Hong, D. G. Cho, K. Lee, S. W. Park, K. Park, Bong Jin Kuh, S. Hyun, S. J. Ahn, J. H. Song
Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node. IMW (2024)
Thomas Bauvent, Gaël Pillonnet, Gabriel Molas
Optimizing RRAM Performance: A Comparative Analysis of Forming Strategies. IMW (2024)
Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW (2024)
A. Grun, Z. L. Lui, C. W. Cheng, D. Piatek, E. K. Lai, Y. T. Kuo, Wei-Chih Chien, S. Cheng, M. J. BrightSky, H. L. Lung, H. Y. Cheng
AsSeGeS and GeN Heterostructures for Superior OTS Performance. IMW (2024)
Yuanbiao Li, Xinyi Tang, Guangwei Xu, Songming Miao, Xiao Chen, Jiachen Li, Di Lu, Shibing Long
CMOS-Compatible Low-T Processing Methods for HZO-based DRAM capacitors by E-field Cycling. IMW (2024)
Jihun Kim, Sangsu Park, Hongju Suh, Youngjae Kwon, Seonghun Lee, Yubin Lee, Kayoung Kim, Eungu Han, Jongil Kim, Kyu Sung Kim, Hyejung Choi, Seungwook Ryu, Su Jin Chae, Seho Lee, Soo Gil Kim, Jaeyun Yi, Seonyong Cha
Realistic Noise-aware Training as a Component of the Holistic ACiM Development Platform. IMW (2024)

2023