IMW

Keyphrases

Publications

2023

Zhijun Chen, Fred Fishburn, Chang Seok Kang, Sony Varghese, Bala Haran
Materials Enabled Memory Scaling and New Architectures. IMW (2023)
Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den Bosch, Jan Van Houdt, Maarten Rosmeulen
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW (2023)
Z. Asher Bai, Yixian Wang, Lixue Liu, Xi Zhang, Feng Yuan, Junsheng Meng, Zhongming Liu, Js Jeon, James Cho, Blacksmith Wu, Huihui Li, Guilei Wang, Chao Zhao, Kanyu Cao
Dielectric Relaxation Performance of DRAM Storage Capacitors and Ways of Improvement. IMW (2023)
Viktor Markov, Gilles Festes, Louisa Schneider, Steven Lemke, Serguei Jourba, Alexander Kotov
Effect of High-Temperature Bake on RTN Statistics in Floating Gate Flash Memory Arrays. IMW (2023)
Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW (2023)
Vivek Parmar, Sandeep Kaur Kingra, Deepak Verma, Digamber Pandey, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Pares, Laurent Grenouillet, Jean-François Nodin, Manan Suri
Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. IMW (2023)
Yasuhiro Taniguchi, Shoji Yoshida, Teruhiko Egashira, ChihBin Kuo, YiYang Shie, YuChun Wang, ChenYu Huang, Tsuyoshi Tamatsu, Keiji Okamoto, Masanobu Hishiki, Yasushi Sasaki, Fukuo Owada, Nobuhiko Ito, Yutaka Shinagawa, ChihMing Kuo, Satoshi Noda, Toshikazu Matsui, Kosuke Okuyama
SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C. IMW (2023)
Tobias Ziegler, Leon Brackmann, Tyler Hennen, Christopher Bengel, Stephan Menzel, Dirk J. Wouters
Eliminating Capacitive Sneak Paths in Associative Capacitive Networks based on Complementary Resistive Switches for In-Memory Computing. IMW (2023)
S. Rachidi, S. Ramesh, L. Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, G. Van den Bosch, Maarten Rosmeulen
Enabling 3D NAND Trench Cells for Scaled Flash Memories. IMW (2023)
Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM. IMW (2023)
Sun Il Shim, Jaehoon Jang, Jaihyuk Song
Trends and Future Challenges of 3D NAND Flash Memory. IMW (2023)
David Lehninger, Ayse Sünbül, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer
Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress. IMW (2023)
Noboru Shibata, Hironori Uchikawa, Taira Shibuya, Kenri Nakai, Kosuke Yanagidaira, Hirofumi Inoue
7-Bit/2Cell (X3.5), 9-Bit/2Cell (X4.5) NAND Flash Memory: Half Bit technology. IMW (2023)
Alessandro Grossi, Matteo Coppetta, Stefano Aresu, Andreas Kux, Thomas Kern, Robert Strenz
28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers. IMW (2023)
Kazuma Hasegawa, Yuta Aiba, Xu Li, Hitomi Tanaka, Takayuki Miyazaki, Hideko Mukaida, Masaru Koyanagi, Masayuki Miura, Tomoya Sanuki
Low Power and Thermal Throttling-less SSD with In-Package Boost Converter for 1000-WL Layer 3D Flash Memory. IMW (2023)
Wei-Chen Chen, Hang-Ting Lue, Tzu-Hsuan Hsu, Keh-Chung Wang, Chih-Yuan Lu
A Simulation Study of Scaling Capability toward 10nm for the 3D Stackable Gate-Controlled Thyristor (GCT) DRAM Device. IMW (2023)
Pradeep Subrahmanyan, Wonjae Lee, Jeff Lischer, Ram Karur, Olga Kucher, Stan Todorov, Adaeze Osonkie
Overlay Control in HAR device integration. IMW (2023)
Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Tarek Ali, Halid Mulaosmanovic, Stefan Dünkel, Johannes Müller, Sven Beyer, Gerald Gerlach
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. IMW (2023)
Xianzhou Shao, Junshuai Chai, Min Liao, Jiahui Duan, Fengbin Tian, Xiaoyu Ke, Xiaoqing Sun, Hao Xu, Jinjuan Xiang, Xiaolei Wang, Wenwu Wang
Comprehensive Study of Endurance Fatigue in the Scaled Si FeFET by in-situ Vth Measurement and Endurance Enhancement Strategy. IMW (2023)
Andrew Bicksler, Carmine Miccoli, Srinath Venkatesan
Physical Model and Characteristics of 3D NAND Memory Cell Metastability Issues under High Temperature Stress. IMW (2023)
J. Laguerre, Marc Bocquet, Olivier Billoint, S. Martin, Jean Coignus, Catherine Carabasse, T. Magis, T. Dewolf, François Andrieu, Laurent Grenouillet
Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. IMW (2023)
Antonino Conte, Francesco Tomaiuolo, Marco Ruta, Andrea Redaelli, Franck Arnaud, Thomas Jouanneau, Christian Boccaccio, Olivier Weber
An 18nm ePCM with BJT selector NVM design for advanced microcontroller applications. IMW (2023)
Siddharth Rao, Kaiming Cai, Giacomo Talmelli, Nathali Franchina-Vergel, Ward Janssens, Hubert Hody, Farrukh Yasin, Kurt Wostyn, Sebastien Couet
Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications. IMW (2023)
Song-Hyeon Kuk, Jae-Hoon Han, Bong Ho Kim, Junpyo Kim, Sang-Hyeon Kim
Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. IMW (2023)
IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023 IMW (2023)
Subhali Subhechha, Stefan Cosemans, Attilio Belmonte, Nouredine Rassoul, Shamin Houshmand Sharifi, Peter Debacker, Diederik Verkest, Romain Delhougne, Gouri Sankar Kar
Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays. IMW (2023)
Wei-Chih Chien, E. K. Lai, L. Buzi, C. W. Cheng, C. W. Yeh, A. Ray, L. M. Gignac, N. Gong, H. Y. Cheng, A. Grun, D. Y. Lee, W. Kim, A. Majumdar, Douglas M. Bishop, Robert L. Bruce, D. Daudelin, H. Y. Ho, M. J. BrightSky, H. L. Lung
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications. IMW (2023)
Nicola Lepri, P. Gibertini, Piergiulio Mannocci, A. Pirovano, I. Tortorelli, Paolo Fantini, Daniele Ielmini
In-memory neural network accelerator based on phase change memory (PCM) with one-selector/one-resistor (1S1R) structure operated in the subthreshold regime. IMW (2023)
Biswajit Ray, Matchima Buddhanoy, Mondol Anik Kumar
Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory. IMW (2023)
Sola Woo, Gihun Choe, Asif Islam Khan, Suman Datta, Shimeng Yu
Design of Ferroelectric-Metal Field-Effect Transistor for Multi-Level-Cell 3D NAND Flash. IMW (2023)
Suhwan Lim, Samki Kim, Changhee Lee, Hyeongwon Choi, Nambin Kim, Jaehun Jung, Hanvit Yang, Tae-Hun Kim, Junhee Lim, Daewon Ha, Sunghoi Hur, Jae-hoon Jang, Yu-Gyun Shin, Jaihyuk Song
Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND. IMW (2023)
Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW (2023)
Yuri Tkachev, Steven Lemke, Louisa Schneider, Gilles Festes, Parviz Ghazavi
Analog Tuning of Floating-Gate Cells with Sub-Elementary Charge Accuracy for In-Memory Computing Applications. IMW (2023)
Bastien Giraud, S. Ricavy, Yasser Moursy, C. Laffond, I. Sever, Valentin Gherman, M. Pezzin, F. Lepin, M. Diallo, K. Zenati, S. Dumas, M. Vershkov, Alessandro Bricalli, Giuseppe Piccolboni, Jean-Philippe Noël, A. Samir, Gaël Pillonnet, Yvain Thonnart, Gabriel Molas
Benefits of Design Assist Techniques on Performances and Reliability of a RRAM Macro. IMW (2023)
Takuto Nishimura, Yuya Ichikawa, Akira Goda, Naoko Misawa, Chihiro Matsui, Ken Takeuchi
Stochastic Computing-based Computation-in-Memory (SC CiM) Architecture for DNNs and Hierarchical Evaluations of Non-volatile Memory Error and Defect Tolerance. IMW (2023)
Meng Huang, Shufang Si, Zheng He, Ying Zhou, Sijia Li, Hong Wang, Jinying Liu, Dongsheng Xie, Mengmeng Yang, Kang You, Chris Choi, Yi Tang, Xiaojie Li, Shibing Qian, Xiaodong Yang, Long Hou, Weiping Bai, Zhongming Liu, Yanzhe Tang, Qiong Wu, Yanqin Wang, Tao Dou, Jake Kim, Guilei Wang, Jie Baisp, Adachi Takao, Chao Zhao, Abraham Yoo
A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation. IMW (2023)
Daohuan Feng, Yi Jiang, Yunsong Qiu, Yuhong Zheng, Harry Kim, Jaewoo Kim, Jian Chu, Guangsu Shao, Yucheng Liao, Chen Yang, Minrui Hu, Wenli Zhao, Linjiang Xia, Jianfeng Xiao, Di Ma, Yuan Cheng, Xiangbo Kong, Chao Lin, Tianming Li, Yongjie Li, Jingheng Meng, Kai Shao, Yan Wang, Xiaoan Yang, Xiang Liu, Qinghua Han, Huiming Li, Yanzhe Tang, Mingde Liu, Eric Wu, Xiaoping Li, Renrui Huang, Mingtang Zhang, Long Hou, Xuan Pan, Xinwen Jin, Shuiping Zhao, Dh Han, Ted Park, Deyuan Xiao, Chao Zhao, Abraham Yoo
DRAM Architecture. IMW (2023)
Astha Khandelwal, Rajesh Chopdekar, Akash Surampalli, Kaushal Tiwari, Naveen Negi, Alan Kalitsov, Lei Wan, Jordan A. Katine, Derek Stewart, Tiffany S. Santos, Yen-Lin Huang, Ramamoorthy Ramesh, Bhagwati Prasad
Voltage Control of Magnetism: Low-Power Spintronics. IMW (2023)
Jeongdong Choe
Recent Technology Insights on STT-MRAM: Structure, Materials, and Process Integration. IMW (2023)
Po-Hao Tseng, Tian-Cig Bo, Yu-Hsuan Lin, Yu-Chao Lin, Jhe-Yi Liao, Feng-Ming Lee, Yu-Yu Lin, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
SLC and MLC In-Memory-Approximate-Search Solutions in Commercial 48-layer and 96-layer 3D-NAND Flash Memories. IMW (2023)
Soochan Chung, Dong-Hyeon Ko, Joonsung Lim, Kyungmoon Kim, Sejie Takaki, Yujeong Seo, Byoungil Lee, Sejun Park, Jaeduk Lee, Kyungyoon Noh, Su Jin Ahn, Sunghoi Hur
Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production. IMW (2023)
Gianluca Nicosia, Niccolò Righetti, Yingda Dong
Distributed Cycling in Charge Trap-Based 3D NAND Arrays: Model and Qualification Tests Implications. IMW (2023)

2022