Gouri Sankar Kar

Publication Activity (10 Years)

Years Active: 2015-2024
Publications (10 Years): 58

Top Topics

Embedded Systems

Top Venues

VLSI Technology and Circuits

Publications

Surendra Hemaram, Mehdi B. Tahoori, Francky Catthoor, Siddharth Rao, Sebastien Couet, Gouri Sankar Kar
Hard Error Correction in STT-MRAM. ASPDAC (2024)
Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. IRPS (2024)
Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. IRPS (2024)
Taras Ravsher, Andrea Fantini, Kruti Trivedi, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Jan Van Houdt, Valeri Afanas'ev, Kurt Wostyn, Sebastien Couet, Gouri Sankar Kar
Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification. IMW (2024)
Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. IRPS (2024)
Mohit Kumar Gupta, Manu Perumkunnil, Dwaipayan Biswas, Saeideh Alinezhad Chamazcoti, Gouri Sankar Kar, Arnaud Furnémont, Julien Ryckaert
Design Technology co-optimization of 1D-1VCMA to improve read performance for SCM applications. ISCAS (2023)
Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Nathali Franchina-Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Kurt Wostyn, Loris Angelo Labbate, Sebastien Couet, Gouri Sankar Kar
. ESSDERC (2023)
S. Kundu, D. H. van Doip, Tom Schram, Quentin Smets, S. Banerjee, Benjamin Groven, Daire Cott, S. Decoster, P. Bezard, F. Lazzarino, K. Banerjee, S. Ghosh, J. F. de Mamelfe, Pierre Morin, Cesar J. Lockhart de la Rosa, Inge Asselberghs, Gouri Sankar Kar
Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach. VLSI Technology and Circuits (2023)
S. Ghosh, Quentin Smets, S. Banerjee, Tom Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, S. Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. VLSI Technology and Circuits (2023)
Devin Verreck, Piet Wambacq, Maarten Van De Put, Zubair Ahmed, Quentin Smets, Aryan Afzalian, Rutger Duflou, Xiangyu Wu, Gioele Mirabelli, Rongmei Chen, Inge Asselberghs, Gouri Sankar Kar
The Promise of 2-D Materials for Scaled Digital and Analog Applications. ISSCC (2023)
Sicong Yuan, Z. Zhang, Moritz Fieback, Hanzhi Xun, Erik Jan Marinissen, Gouri Sankar Kar, Sidharth Rao, Sebastien Couet, M. Taouil, Said Hamdioui
Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs. ITC (2023)
L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS (2023)
Saeideh Alinezhad Chamazcoti, Mohit Gupta, Hyungrock Oh, Timon Evenblij, Francky Catthoor, Manu Perumkunnil Komalan, Gouri Sankar Kar, Arnaud Furnémont
Exploring Pareto-Optimal Hybrid Main Memory Configurations Using Different Emerging Memories. IEEE Trans. Circuits Syst. I Regul. Pap. 70 (2) (2023)
Subhali Subhechha, Stefan Cosemans, Attilio Belmonte, Nouredine Rassoul, Shamin Houshmand Sharifi, Peter Debacker, Diederik Verkest, Romain Delhougne, Gouri Sankar Kar
Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays. IMW (2023)
Sicong Yuan, Mottaqiallah Taouil, Moritz Fieback, Hanzhi Xun, Erik Jan Marinissen, Gouri Sankar Kar, Sidharth Rao, Sebastien Couet, Said Hamdioui
Device-Aware Test for Back-Hopping Defects in STT-MRAMs. DATE (2023)
M. Gupta, Siddharth Rao, Gouri Sankar Kar, S. Couet
Magnetic Domain Wall Memory: A DTCO study for Memory Applications. ESSDERC (2023)
Attilio Belmonte, S. Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar
A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. VLSI Technology and Circuits (2023)
Mihaela Ioana Popovici, Jasper Bizindavyi, Gourab De, Dae Seon Kwon, Gouri Sankar Kar, Jan Van Houdt
Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate. ESSDERC (2023)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
Characterization, Modeling, and Test of Intermediate State Defects in STT-MRAMs. IEEE Trans. Computers 71 (9) (2022)
Kaiming Cai, Simon Van Beek, Siddharth Rao, K. Fan, M. Gupta, V. D. Nguyen, Ganesh Jayakumar, G. Talmelli, S. Couet, Gouri Sankar Kar
Selective operations of multi-pillar SOT-MRAM for high density and low power embedded memories. VLSI Technology and Circuits (2022)
S. Subhechha, Nouredine Rassoul, Attilio Belmonte, H. Hody, Harold Dekkers, Michiel J. van Setten, Adrian Chasin, Shamin H. Sharifi, K. Banerjee, H. Puliyalil, S. Kundu, M. Pak, D. Tsvetanova, N. Bazzazian, Kevin Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. ICICDT (2022)
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. VLSI Technology and Circuits (2022)
Mohit Gupta, Manu Perumkunnil, Andrea Fantini, Saeideh Alinezhad Chamazcoti, Woojin Kim, Marie Garcia Bardon, Gouri Sankar Kar, Arnaud Furnémont
Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications. ESSDERC (2022)
S. Subhechha, Nouredine Rassoul, Attilio Belmonte, H. Hody, Harold Dekkers, Michiel J. van Setten, Adrian Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, S. Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, N. Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. VLSI Technology and Circuits (2022)
F. Meng, Florin Ciubotaru, S.-Y. Lee, Odysseas Zografos, M. Gupta, V. D. Nguyen, S. Couet, Gouri Sankar Kar, Giovanni De Micheli, Christoph Adelmann, I. Asselberghs
Challenges and targets of MRAM-enabled scaled spintronic logic circuits. CoRR (2022)
Mahta Mayahinia, Mehdi B. Tahoori, Manu Perumkunnil Komalan, Houman Zahedmanesh, Kristof Croes, Tommaso Marinelli, José Ignacio Gómez Pérez, Timon Evenblij, Gouri Sankar Kar, Francky Catthoor
Time-Dependent Electromigration Modeling for Workload-Aware Design-Space Exploration in STT-MRAM. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41 (12) (2022)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41 (11) (2022)
Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS (2022)
Simon Van Beek, Kaiming Cai, Siddharth Rao, Ganesh Jayakumar, Sebastien Couet, Nico Jossart, Adrian Chasin, Gouri Sankar Kar
MTJ degradation in SOT-MRAM by self-heating-induced diffusion. IRPS (2022)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
Testing STT-MRAM: Manufacturing Defects, Fault Models, and Test Solutions. ITC (2021)
Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW (2021)
Gaspard Hiblot, Nouredine Rassoul, Lieve Teugels, Katia Devriendt, Adrian Vaisman Chasin, Michiel van Setten, Attilio Belmonte, Romain Delhougne, Gouri Sankar Kar
Process-induced charging damage in IGZO nTFTs. IRPS (2021)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
Characterization and Fault Modeling of Intermediate State Defects in STT-MRAM. DATE (2021)
Sidharth Rao, Woojin Kim, Simon Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Farrukh Yasin, Sebastien Couet, Robert Carpenter, Barry J. O'Sullivan, Shamin H. Sharifi, N. Jossart, Laurent Souriau, Ludovic Goux, Dimitri Crotti, Gouri Sankar Kar
STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application. IMW (2021)
Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar
Modeling and spectroscopy of ovonic threshold switching defects. IRPS (2021)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Guilherme Cardoso Medeiros, Moritz Fieback, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
Defect and Fault Modeling Framework for STT-MRAM Testing. IEEE Trans. Emerg. Top. Comput. 9 (2) (2021)
Hyungrock Oh, Attilio Belmonte, Manu Perumkunnil, Jérôme Mitard, Nouredine Rassoul, Gabriele Luca Donadio, Romain Delhougne, Arnaud Furnémont, Gouri Sankar Kar, Wim Dehaene
Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications. ESSDERC (2021)
Simon Van Beek, Siddharth Rao, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution. IRPS (2021)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
Impact of Magnetic Coupling and Density on STT-MRAM Performance. CoRR (2020)
Sarath Mohanachandran Nair, Rajendra Bishnoi, Mehdi B. Tahoori, Houman Zahedmanesh, Kristof Croes, Kevin Garello, Gouri Sankar Kar, Francky Catthoor
Physics based modeling of bimodal electromigration failure distributions and variation analysis for VLSI interconnects. IRPS (2020)
Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. IRPS (2020)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
Impact of Magnetic Coupling and Density on STT-MRAM Performance. DATE (2020)
Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
Characterization, Modeling and Test of Synthetic Anti-Ferromagnet Flip Defect in STT-MRAMs. ITC (2020)
Trong Huynh Bao, Anabela Veloso, Sushil Sakhare, Philippe Matagne, Julien Ryckaert, Manu Perumkunnil, Davide Crotti, Farrukh Yasin, Alessio Spessot, Arnaud Furnémont, Gouri Sankar Kar, Anda Mocuta
Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications. DAC (2019)
Sarath Mohanachandran Nair, Rajendra Bishnoi, Mehdi Baradaran Tahoori, Houman Zahedmanesh, Kristof Croes, Kevin Garello, Gouri Sankar Kar, Francky Catthoor
Variation-Aware Physics-Based Electromigration Modeling and Experimental Calibration for VLSI Interconnects. IRPS (2019)
Timon Evenblij, Christian Tenllado, Manu Perumkunnil, Francky Catthoor, Sushil Sakhare, Peter Debacker, Gouri Sankar Kar, Arnaud Furnémont, Nicolas Bueno, José Ignacio Gómez Pérez
A Comparative Analysis on the Impact of Bank Contention in STT-MRAM and SRAM Based LLCs. ICCD (2019)
Kevin Garello, Farrukh Yasin, H. Hody, S. Couet, Laurent Souriau, Shamin H. Sharifi, Johan Swerts, Robert Carpenter, S. Rao, Wonsub Kim, J. Wu, K. K. V. Sethu, M. Pak, N. Jossart, D. Crotti, Arnaud Furnémont, Gouri Sankar Kar
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM. VLSI Circuits (2019)
Lizhou Wu, Siddharth Rao, Guilherme Cardoso Medeiros, Mottaqiallah Taouil, Erik Jan Marinissen, Farrukh Yasin, Sebastien Couet, Said Hamdioui, Gouri Sankar Kar
Pinhole Defect Characterization and Fault Modeling for STT-MRAM Testing. ETS (2019)
Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, S. Rao, Wonsub Kim, S. Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar
Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. IRPS (2018)
Manu Komalan, Oh Hyung Rock, Matthias Hartmann, Sushil Sakhare, Christian Tenllado, José Ignacio Gómez, Gouri Sankar Kar, Arnaud Furnémont, Francky Catthoor, Sophiane Senni, David Novo, Abdoulaye Gamatié, Lionel Torres
Main memory organization trade-offs with DRAM and STT-MRAM options based on gem5-NVMain simulation frameworks. DATE (2018)
Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC (2018)
Kevin Garello, Kevin Garello Yasin, S. Couet, Laurent Souriau, Johan Swerts, S. Rao, Simon Van Beek, Wonsub Kim, Enlong Liu, Shreya Kundu, Diana Tsvetanova, Kris Croes, N. Jossart, E. Grimaldi, M. Baumgartner, D. Crotti, Arnaud Fumemont, Pietro Gambardella, Gouri Sankar Kar
SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories. VLSI Circuits (2018)
Kevin Garello, Farrukh Yasin, S. Couet, Laurent Souriau, Johan Swerts, S. Rao, Simon Van Beek, Wonsub Kim, Enlong Liu, Shreya Kundu, Diana Tsvetanova, N. Jossart, Kris Croes, E. Grimaldi, M. Baumgartner, D. Crotti, Arnaud Furnémont, Pietro Gambardella, Gouri Sankar Kar
SOT-MRAM 300mm integration for low power and ultrafast embedded memories. CoRR (2018)
Raf Appeltans, Praveen Raghavan, Gouri Sankar Kar, Arnaud Furnémont, Liesbet Van der Perre, Wim Dehaene
A Smaller, Faster, and More Energy-Efficient Complementary STT-MRAM Cell Uses Three Transistors and a Ground Grid: More Is Actually Less. IEEE Trans. Very Large Scale Integr. Syst. 25 (4) (2017)
Manu Komalan, Sushil Sakhare, Trong Huynh Bao, Siddharth Rao, Woojin Kim, Christian Tenllado, José Ignacio Gómez, Gouri Sankar Kar, Arnaud Furnémont, Francky Catthoor
Cross-layer design and analysis of a low power, high density STT-MRAM for embedded systems. ISCAS (2017)
Attilio Belmonte, Ludovic Goux, Jiyong Woo, Umberto Celano, Augusto Redolfi, Sergiu Clima, Gouri Sankar Kar
Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament. NVMTS (2017)
Naga Sruti Avasarala, Bogdan Govoreanu, Karl Opsomer, Wouter Devulder, Sergiu Clima, Christophe Detavernier, Marleen van der Veen, Jan Van Houdt, Marc Henys, Ludovic Goux, Gouri Sankar Kar
Doped GeSe materials for selector applications. ESSDERC (2017)
Simon Van Beek, Koen Martens, Philippe Roussel, Gabriele Luca Donadio, Johan Swerts, Sofie Mertens, Gouri Sankar Kar, Tai Min, Guido Groeseneken
Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. IRPS (2015)