A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.
Attilio BelmonteS. KunduS. SubhechhaAdrian Vaisman ChasinNouredine RassoulHarold DekkersH. PuliyalilF. SeidelP. CarolanRomain DelhougneGouri Sankar KarPublished in: VLSI Technology and Circuits (2023)