Adrian Vaisman Chasin

Publication Activity (10 Years)

Years Active: 2008-2024
Publications (10 Years): 10

Top Topics

Reactive Planning

Semiconductor Devices

Gate Dielectrics

Top Venues

VLSI Technology and Circuits

Publications

J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS (2024)
Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. IRPS (2024)
Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS (2024)
Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. IRPS (2024)
Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS (2024)
Simon Van Beek, Kaiming Cai, Kaiquan Fan, Giacomo Talmelli, Anna Trovato, Nico Jossart, Siddharth Rao, Adrian Vaisman Chasin, Sebastien Couet
MTJ degradation in multi-pillar SOT-MRAM with selective writing. IRPS (2023)
Attilio Belmonte, S. Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar
A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. VLSI Technology and Circuits (2023)
Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS (2022)
Gaspard Hiblot, Nouredine Rassoul, Lieve Teugels, Katia Devriendt, Adrian Vaisman Chasin, Michiel van Setten, Attilio Belmonte, Romain Delhougne, Gouri Sankar Kar
Process-induced charging damage in IGZO nTFTs. IRPS (2021)
Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. ASICON (2019)
Eduardo N. Gonçalves, Reinaldo M. Palhares, Ricardo H. C. Takahashi, Adrian Vaisman Chasin
Robust model reduction of uncertain systems maintaining uncertainty structure. Int. J. Control 82 (11) (2009)
Ayyaz Mahmood Paracha, Philippe Basset, Frédéric Marty, Adrian Vaisman Chasin, Patrick Poulichet, Tarik Bourouina
A High Power Density Electrostatic Vibration-to-Electric Energy Converter Based On An In-Plane Overlap Plate (IPOP) Mechanism CoRR (2008)