Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors.
Eddy SimoenAlberto Vinicius OliveiraAnabela VelosoAdrian Vaisman ChasinRomain RitzenthalerHans MertensNaoto HoriguchiCor ClaeysPublished in: ASICON (2019)
Keyphrases
- low frequency
- field effect transistors
- cmos technology
- high frequency
- metal oxide semiconductor
- high density
- steady state
- low power
- frequency domain
- image sensor
- wavelet transform
- mathematical analysis
- semiconductor devices
- low cost
- subband
- wavelet coefficients
- power consumption
- integrated circuit
- wavelet analysis
- discrete wavelet transform
- electromagnetic fields
- frequency band
- power dissipation
- high frequency components
- low pass
- silicon on insulator
- high speed
- spatial domain
- parallel processing
- fusion rules
- silicon dioxide
- image processing
- gate dielectrics
- space charge
- processing elements
- original images
- high resolution
- multiresolution
- multiscale
- similarity measure