Naoto Horiguchi

Publication Activity (10 Years)

Years Active: 2012-2024
Publications (10 Years): 16

Top Topics

Gallium Arsenide

Shape Variability

Silicon On Insulator

Top Venues

VLSI Technology and Circuits

Publications

Andrea Vici, Robin Degraeve, Naoto Horiguchi, Ingrid De Wolf, Jacopo Franco
SILC and TDDB reliability of novel low thermal budget RMG gate stacks. IRPS (2024)
Victor Vega-Gonzalez, D. Radisic, Bt Chan, S. Choudhury, S. Wang, A. Mingardi, Q. Toan Le, H. Decoster, Y. Oniki, P. Puttarame, Kevin Vandersmissen, J. P. Soulie, A. Peter, A. Sepulveda, D. Batuk, G. T. Martinez, Olivier Richard, Jürgen Bömmels, S. Biesemans, E. Dentoni Litta, Naoto Horiguchi, S. Park, Zsolt Tokei
Integration of a Stacked Contact MOL for Monolithic CFET. VLSI Technology and Circuits (2023)
Anabela Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi
Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails. VLSI Technology and Circuits (2022)
Alessio Spessot, Shairfe Muhammad Salahuddin, Ricardo Escobar, Romain Ritzenthaler, Yang Xiang, Rahul Budhwani, Eugenio Dentoni Litta, Elena Capogreco, Joao Bastos, Yangyin Chen, Naoto Horiguchi
Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generations. IMW (2022)
Romain Ritzenthaler, E. Capogreco, E. Dupuy, Hiroaki Arimura, J. P. Bastos, P. Favia, F. Sebaai, D. Radisic, V. T. H. Nguyen, G. Mannaert, B. T. Chan, V. Machkaoutsan, Y. Yoon, H. Itokawa, M. Yamaguchi, Y. Chen, Pierre Fazan, S. Subramanian, Alessio Spessot, E. Dentoni Litta, S. Samavedam, Naoto Horiguchi
High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories. VLSI Technology and Circuits (2022)
K. Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, J. De Boeck, Guido Groeseneken, Julien Ryckaert, Gert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi
Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO. VLSI Technology and Circuits (2022)
Alicja Lesniewska, Olalla Varela Pedreira, Melina Lofrano, Gayle Murdoch, Marleen H. van der Veen, Anish Dangol, Naoto Horiguchi, Zsolt Tokei, Kris Croes
Reliability of a DME Ru Semidamascene scheme with 16 nm wide Airgaps. IRPS (2021)
Adrian Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS (2020)
Chen Wu, Adrian Chasin, Steven Demuynck, Naoto Horiguchi, Kris Croes
Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects. IRPS (2020)
Yefan Liu, Hao Yu, Gaspard Hiblot, Anastasiia Kruv, Marc Schaekers, Naoto Horiguchi, Dimitrios Velenis, Ingrid De Wolf
Study of the Mechanical Stress Impact on Silicide Contact Resistance by 4-Point Bending. IRPS (2019)
Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. ASICON (2019)
Marco Simicic, Geert Hellings, Shih-Hung Chen, Naoto Horiguchi, Dimitri Linten
ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology. ESSDERC (2018)
Philippe J. Roussel, Adrian Chasin, Steven Demuynck, Naoto Horiguchi, Dimitri Linten, Anda Mocuta
New methodology for modelling MOL TDDB coping with variability. IRPS (2018)
Shimpei Yamaguchi, Liesbeth Witters, Jérôme Mitard, Geert Eneman, Geert Hellings, Andriy Hikavyy, Roger Loo, Naoto Horiguchi
implant free quantum well pFET. Microelectron. Reliab. 83 (2018)
Mustafa Badaroglu, Jeff Xu, John Zhu, Da Yang, Jerry Bao, Seung-Chul Song, Peijie Feng, Romain Ritzenthaler, Hans Mertens, Geert Eneman, Naoto Horiguchi, Jeffrey Smith, Suman Datta, David Kohen, Po-Wen Chan, Keagan Chen, P. R. Chidi Chidambaram
PPAC scaling enablement for 5nm mobile SoC technology. ESSDERC (2017)
Thomas Chiarella, S. Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, A. De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean
Towards high performance sub-10nm finW bulk FinFET technology. ESSDERC (2016)
Kazuyuki Tomida, Keizo Hiraga, Morin Dehan, Geert Hellings, Doyoung Jang, Kenichi Miyaguchi, Thomas Chiarella, Minsoo Kim, Anda Mocuta, Naoto Horiguchi, Abdelkarim Mercha, Diederik Verkest, Aaron Thean
Impact of fin shape variability on device performance towards 10nm node. ICICDT (2015)
Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marco Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC (2015)
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS (2015)
Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. IRPS (2015)
Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration. ICICDT (2015)
Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs. ICICDT (2015)
Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS (2015)
Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son
Assessment of SiGe quantum well transistors for DRAM peripheral applications. ICICDT (2015)
Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT (2015)
Praveen Raghavan, Marie Garcia Bardon, Doyoung Jang, P. Schuddinck, Dmitry Yakimets, Julien Ryckaert, Abdelkarim Mercha, Naoto Horiguchi, Nadine Collaert, Anda Mocuta, Dan Mocuta, Zsolt Tokei, Diederik Verkest, Aaron Thean, A. Steegen
Holisitic device exploration for 7nm node. CICC (2015)
Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, H.-J. Na, Y. Son, K. B. Noh
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC (2013)
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT (2012)