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Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs.

Alessio SpessotRomain RitzenthalerTom SchramMarc AoulaicheMoonju ChoMaria Toledano-LuqueNaoto HoriguchiPierre Fazan
Published in: ICICDT (2015)
Keyphrases
  • low voltage
  • main memory
  • high density
  • data sets
  • real world
  • factors that influence
  • failure rate