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Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs.
Alessio Spessot
Romain Ritzenthaler
Tom Schram
Marc Aoulaiche
Moonju Cho
Maria Toledano-Luque
Naoto Horiguchi
Pierre Fazan
Published in:
ICICDT (2015)
Keyphrases
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low voltage
main memory
high density
data sets
real world
factors that influence
failure rate