Kevin Vandersmissen

Publication Activity (10 Years)

Years Active: 2014-2023
Publications (10 Years): 7

Top Topics

Gate Dielectrics

Top Venues

VLSI Technology and Circuits

Publications

Victor Vega-Gonzalez, D. Radisic, Bt Chan, S. Choudhury, S. Wang, A. Mingardi, Q. Toan Le, H. Decoster, Y. Oniki, P. Puttarame, Kevin Vandersmissen, J. P. Soulie, A. Peter, A. Sepulveda, D. Batuk, G. T. Martinez, Olivier Richard, Jürgen Bömmels, S. Biesemans, E. Dentoni Litta, Naoto Horiguchi, S. Park, Zsolt Tokei
Integration of a Stacked Contact MOL for Monolithic CFET. VLSI Technology and Circuits (2023)
Hans Mertens, M. Hosseini, Thomas Chiarella, D. Zhou, S. Wang, G. Mannaert, E. Dupuy, D. Radisic, Z. Tao, Y. Oniki, Andriy Hikavyy, R. Rosseel, A. Mingardi, S. Choudhury, P. Puttarame Gowda, F. Sebaai, A. Peter, Kevin Vandersmissen, J. P. Soulie, An De Keersgieter, L. Petersen Barbosa Lima, C. Cavalcante, D. Batuk, G. T. Martinez, J. Geypen, F. Seidel, K. Paulussen, P. Favia, Jürgen Bömmels, Roger Loo, P. Wong, A. Sepulveda Marquez, B. T. Chan, Jérôme Mitard, S. Subramanian, S. Demuynck, E. Dentoni Litta, N. Horiguchi, S. Samavedam, S. Biesemans
Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning. VLSI Technology and Circuits (2023)
Anabela Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi
Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails. VLSI Technology and Circuits (2022)
A. Vandooren, N. Parihar, Jacopo Franco, Roger Loo, H. Arimura, R. Rodriguez, F. Sebaai, S. Iacovo, Kevin Vandersmissen, W. Li, G. Mannaert, D. Radisic, E. Rosseel, Andriy Hikavyy, A. Jourdain, O. Mourey, G. Gaudin, S. Reboh, L. Le Van-Jodin, G. Besnard, C. Roda Neve, B.-Y. Nguyen, I. Radu, E. Dentoni Litta, N. Horiguchi
Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections. VLSI Technology and Circuits (2022)
S. Subhechha, Nouredine Rassoul, Attilio Belmonte, H. Hody, Harold Dekkers, Michiel J. van Setten, Adrian Chasin, Shamin H. Sharifi, K. Banerjee, H. Puliyalil, S. Kundu, M. Pak, D. Tsvetanova, N. Bazzazian, Kevin Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. ICICDT (2022)
S. Subhechha, Nouredine Rassoul, Attilio Belmonte, H. Hody, Harold Dekkers, Michiel J. van Setten, Adrian Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, S. Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, N. Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. VLSI Technology and Circuits (2022)
Cheng Han Wu, Steven Brems, Didit Yudistira, Daire Cott, A. Milenin, Kevin Vandersmissen, A. Maestre, A. Centeno, Joris Van Campenhout, Cedric Huyghebaert, Marianna Pantouvaki
Graphene electro-absorption modulators integrated at wafer-scale in a CMOS fab. VLSI Circuits (2021)
Fumihiro Inoue, Harold Philipsen, Marleen H. van der Veen, Kevin Vandersmissen, Stefaan Van Huylenbroeck, Herbert Struyf, Tetsu Tanaka
Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias. 3DIC (2014)