Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
S. SubhechhaNouredine RassoulAttilio BelmonteH. HodyHarold DekkersMichiel J. van SettenAdrian ChasinShamin H. SharifiS. SutarL. MagnarinUmberto CelanoH. PuliyalilS. KunduM. PakLieve TeugelsD. TsvetanovaN. BazzazianKevin VandersmissenC. BiasottoD. BatukJ. GeypenJ. HeijlenRomain DelhougneGouri Sankar KarPublished in: VLSI Technology and Circuits (2022)