Hiroaki Arimura

Publication Activity (10 Years)

Years Active: 2013-2024
Publications (10 Years): 5

Top Topics

Solder Ball Connect

Top Venues

VLSI Technology and Circuits

Publications

J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS (2024)
Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, S. Brus, Romain Ritzenthaler, E. Dentoni Litta, Kris Croes, Ben Kaczer, N. Horiguchi
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. VLSI Technology and Circuits (2023)
Hiroaki Arimura, S. Brus, Jacopo Franco, Y. Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, N. Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. VLSI Technology and Circuits (2023)
Anabela Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi
Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails. VLSI Technology and Circuits (2022)
Romain Ritzenthaler, E. Capogreco, E. Dupuy, Hiroaki Arimura, J. P. Bastos, P. Favia, F. Sebaai, D. Radisic, V. T. H. Nguyen, G. Mannaert, B. T. Chan, V. Machkaoutsan, Y. Yoon, H. Itokawa, M. Yamaguchi, Y. Chen, Pierre Fazan, S. Subramanian, Alessio Spessot, E. Dentoni Litta, S. Samavedam, Naoto Horiguchi
High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories. VLSI Technology and Circuits (2022)
Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, H.-J. Na, Y. Son, K. B. Noh
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC (2013)