Barry J. O'Sullivan

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 18

Top Topics

Room Temperature

Temporal Evolution

Maximum Likelihood

Top Venues

Microelectron. Reliab.

Publications

J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS (2024)
Ping-Yi Hsieh, Ameni Ben Driss, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf
Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors. IRPS (2024)
Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS (2024)
Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf
Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS (2022)
Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS (2022)
Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS (2022)
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS (2022)
Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS (2021)
Sidharth Rao, Woojin Kim, Simon Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Farrukh Yasin, Sebastien Couet, Robert Carpenter, Barry J. O'Sullivan, Shamin H. Sharifi, N. Jossart, Laurent Souriau, Ludovic Goux, Dimitri Crotti, Gouri Sankar Kar
STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application. IMW (2021)
Simon Van Beek, Siddharth Rao, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution. IRPS (2021)
Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. IRPS (2020)
Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS (2020)
Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS (2019)
Alicja Lesniewska, S. A. Srinivasan, Joris Van Campenhout, Barry J. O'Sullivan, Kris Croes
Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors. IRPS (2019)
Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, S. Rao, Wonsub Kim, S. Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar
Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. IRPS (2018)
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS (2018)
Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC (2018)
Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marco Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85 (2018)
J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley
films obtained by UV assisted injection MOCVD. Microelectron. Reliab. 45 (5-6) (2005)
Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven
Flat band voltage shift and oxide properties after rapid thermal annealing. Microelectron. Reliab. 41 (7) (2001)