Tibor Grasser

Publication Activity (10 Years)

Years Active: 2003-2024
Publications (10 Years): 43

Top Topics

Distribution Function

Semiconductor Devices

Machine Learning

Top Venues

Microelectron. Reliab.

Publications

J. A. Yang, Eros Reato, Theresia Knobloch, J.-S. Ko, Z. Zhang, Andrew J. Mannix, Krishna Saraswat, Tibor Grasser, Max Christian Lemme, Eric Pop
Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors. DRC (2024)
Margareta V. Stephanie, Lam Pham, Alexander Schindler, Michael Waltl, Tibor Grasser, Bernhard Schrenk
Neural Network with Optical Frequency-Coded ReLU. OFC (2024)
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS (2024)
Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. IRPS (2023)
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS (2023)
Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS (2022)
Theresia Knobloch, Yury Yu. Illarionov, Tibor Grasser
Finding Suitable Gate Insulators for Reliable 2D FETs. IRPS (2022)
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS (2022)
Christoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities. ESSDERC (2022)
Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. IRPS (2022)
Dominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study. ESSDERC (2022)
Margareta V. Stephanie, Michael Waltl, Tibor Grasser, Bernhard Schrenk
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM. OFC (2022)
Lukas Cvitkovich, Markus Jech, Dominic Waldhör, Al-Moatasem El-Sayed, Christoph Wilhelmer, Tibor Grasser
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface. ESSDERC (2021)
Christoph Wilhelmer, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Tibor Grasser
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network. ESSDERC (2021)
Jacopo Franco, H. Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT (2021)
Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS (2021)
Diego Milardovich, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Tibor Grasser
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. ESSDERC (2021)
Bernhard Ruch, Gregor Pobegen, Christian Schleich, Tibor Grasser
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. IRPS (2020)
Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS (2020)
Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS (2020)
Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS (2020)
Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS (2020)
Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Gös, Tibor Grasser, Ingrid De Wolf
On the impact of mechanical stress on gate oxide trapping. IRPS (2020)
Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS (2020)
Yury Yu. Illarionov, A. G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, N. S. Sokolov, Tibor Grasser
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. DRC (2020)
Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS (2019)
Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC (2019)
Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS (2019)
Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS (2019)
Yury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, Sanchit Deshmukh, Eric Pop, Tibor Grasser
On/Off Current Ratio. DRC (2018)
James H. Stathis, Souvik Mahapatra, Tibor Grasser
Controversial issues in negative bias temperature instability. Microelectron. Reliab. 81 (2018)
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS (2018)
Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. ESSDERC (2018)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marco Simicic, Adrian Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81 (2018)
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS (2018)
Wolfgang Gös, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87 (2018)
Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Reliability of next-generation field-effect transistors with transition metal dichalcogenides. IRPS (2018)
Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marco Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85 (2018)
Bianka Ullmann, Tibor Grasser
Transformation: nanotechnology - challenges in transistor design and future technologies. Elektrotech. Informationstechnik 134 (7) (2017)
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC (2017)
Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Andreas Morhammer, Tibor Grasser, Ansgar Jüngel, Siegfried Selberherr
ViennaCL - Linear Algebra Library for Multi- and Many-Core Architectures. SIAM J. Sci. Comput. 38 (5) (2016)
Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC (2016)
Karl Rupp, Josef Weinbub, Ansgar Jüngel, Tibor Grasser
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units. ACM Trans. Math. Softw. 43 (2) (2016)
Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max C. Lemme, Tibor Grasser
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. ESSDERC (2015)
Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marco Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC (2015)
Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs. Microelectron. Reliab. 55 (9-10) (2015)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC (2015)
Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max C. Lemme, Tibor Grasser
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. IRPS (2015)
Gerhard Rzepa, Wolfgang Gös, Ben Kaczer, Tibor Grasser
Characterization and modeling of reliability issues in nanoscale devices. ISCAS (2015)
Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements. ESSDERC (2015)
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS (2015)
Tibor Grasser, M. Wahl, Wolfgang Gös, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS (2015)
Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS (2015)
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Gös, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
Characterization and modeling of charge trapping: From single defects to devices. ICICDT (2014)
Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Tibor Grasser, Ansgar Jüngel
Performance Portability Study of Linear Algebra Kernels in OpenCL. CoRR (2014)
Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. 22 (2) (2014)
Karl Rupp, Josef Weinbub, Ansgar Jüngel, Tibor Grasser
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units. CoRR (2014)
Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Tibor Grasser, Ansgar Jüngel
Performance portability study of linear algebra kernels in OpenCL. IWOCL (2014)
Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth
Circuit simulation of workload-dependent RTN and BTI based on trap kinetics. Microelectron. Reliab. 54 (11) (2014)
Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectron. Reliab. 54 (9-10) (2014)
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53 (7) (2013)
Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52 (9-10) (2012)
Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52 (9-10) (2012)
Tibor Grasser
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. Microelectron. Reliab. 52 (1) (2012)
Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser
New insights on the PBTI phenomena in SiON pMOSFETs. Microelectron. Reliab. 52 (9-10) (2012)
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT (2012)
Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51 (9-11) (2011)
Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser
An analytical approach for physical modeling of hot-carrier induced degradation. Microelectron. Reliab. 51 (9-11) (2011)
Karl Rupp, Ansgar Jüngel, Tibor Grasser
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors. Facing the Multicore-Challenge (2011)
Karl Rupp, Ansgar Jüngel, Tibor Grasser
Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors. J. Comput. Phys. 229 (23) (2010)
Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser
Interface traps density-of-states as a vital component for hot-carrier degradation modeling. Microelectron. Reliab. 50 (9-11) (2010)
Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49 (9-11) (2009)
Ph. Hehenberger, P.-J. Wagner, Hans Reisinger, Tibor Grasser
On the temperature and voltage dependence of short-term negative bias temperature stress. Microelectron. Reliab. 49 (9-11) (2009)
M. Vasicek, Viktor Sverdlov, Johann Cervenka, Tibor Grasser, Hans Kosina, Siegfried Selberherr
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. LSSC (2009)
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
On the temperature dependence of NBTI recovery. Microelectron. Reliab. 48 (8-9) (2008)
Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr
Comparison of deposition models for a TEOS LPCVD process. Microelectron. Reliab. 47 (4-5) (2007)
Michael Spevak, Tibor Grasser
Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 26 (8) (2007)
Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Gös, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr
VSP - A gate stack analyzer. Microelectron. Reliab. 47 (4-5) (2007)
Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures. Microelectron. Reliab. 47 (4-5) (2007)
Tibor Grasser, Siegfried Selberherr
Editorial. Microelectron. Reliab. 47 (6) (2007)
Johann Cervenka, W. Wessner, E. Al-Ani, Tibor Grasser, Siegfried Selberherr
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 25 (10) (2006)
Stephan Wagner, Tibor Grasser, Claus Fischer, Siegfried Selberherr
An advanced equation assembly module. Eng. Comput. 21 (2) (2005)
Tesfaye Ayalew, Andreas Gehring, Tibor Grasser, Siegfried Selberherr
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination. Microelectron. Reliab. 44 (9-11) (2004)
Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectron. J. 35 (10) (2004)
Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr
Improving SiC lateral DMOSFET reliability under high field stress. Microelectron. Reliab. 43 (9-11) (2003)
Tibor Grasser, Ting-Wei Tang, Hans Kosina, Siegfried Selberherr
A review of hydrodynamic and energy-transport models for semiconductor device simulation. Proc. IEEE 91 (2) (2003)