Hans Reisinger

Publication Activity (10 Years)

Years Active: 2009-2024
Publications (10 Years): 13

Top Topics

Electrical Power

Temporal Evolution

Positively Correlated

Top Venues

Microelectron. Reliab.

Publications

Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS (2024)
Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. IRPS (2023)
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS (2023)
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS (2022)
Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. IRPS (2022)
Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS (2021)
Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. IRPS (2020)
Christian Schlünder, Katja Waschneck, Peter Rotter, Susanne Lachenmann, Hans Reisinger, Franz Ungar, Georg Georgakos
From Device Aging Physics to Automated Circuit Reliability Sign Off. IRPS (2019)
Christian Schlünder, Katja Puschkarsky, Gunnar Andreas Rott, Wolfgang Gustin, Hans Reisinger
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification. Microelectron. Reliab. 82 (2018)
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS (2018)
Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. ESSDERC (2018)
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS (2018)
Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger
Degradation and recovery of variability due to BTI. Microelectron. Reliab. 64 (2016)
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Gös, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
Characterization and modeling of charge trapping: From single defects to devices. ICICDT (2014)
Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectron. Reliab. 54 (9-10) (2014)
Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser
New insights on the PBTI phenomena in SiON pMOSFETs. Microelectron. Reliab. 52 (9-10) (2012)
Ph. Hehenberger, P.-J. Wagner, Hans Reisinger, Tibor Grasser
On the temperature and voltage dependence of short-term negative bias temperature stress. Microelectron. Reliab. 49 (9-11) (2009)