Gerald Rescher

Publication Activity (10 Years)

Years Active: 2018-2023
Publications (10 Years): 5

Top Topics

Personality Traits

Hypothesis Test

Field Effect Transistors

Top Venues

Microelectron. Reliab.

Publications

Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS (2023)
Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS (2021)
Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS (2020)
Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. IRPS (2020)
Thomas Aichinger, Gerald Rescher, Gregor Pobegen
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80 (2018)