Login / Signup
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.
Sebastian Maaß
Hans Reisinger
Thomas Aichinger
Gerald Rescher
Published in:
IRPS (2020)
Keyphrases
</>
high voltage
normal operation
partial discharge
operating conditions
personality traits
fuel cell
data mining
field effect transistors
neural network
decision making
reinforcement learning
low power
fault detection
silicon dioxide
leakage current