Thomas Aichinger

Publication Activity (10 Years)

Years Active: 2008-2024
Publications (10 Years): 10

Top Topics

Room Temperature

Parameter Adjustment

Silicon Dioxide

Hypothesis Test

Top Venues

Microelectron. Reliab.

Publications

Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS (2024)
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS (2023)
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS (2022)
Judith Berens, Thomas Aichinger
A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs. IRPS (2021)
Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS (2021)
Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS (2020)
Thomas Aichinger, Matthias Schmidt
Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. IRPS (2020)
Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. IRPS (2020)
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS (2018)
Thomas Aichinger, Gerald Rescher, Gregor Pobegen
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80 (2018)
Johannes Grinschgl, Armin Krieg, Christian Steger, Reinhold Weiss, Holger Bock, Josef Haid, Thomas Aichinger, Christiane Ulbricht
Case study on multiple fault dependability and security evaluations. Microprocess. Microsystems 37 (2) (2013)
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53 (7) (2013)
Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51 (9-11) (2011)
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
On the temperature dependence of NBTI recovery. Microelectron. Reliab. 48 (8-9) (2008)