A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.

Tibor Grasser Maximilian W. Feil Katja Waschneck Hans Reisinger Judith Berens Dominic Waldhör A. Vasilev Michael Waltl Thomas Aichinger M. Bockstedte Wolfgang Gustin Gregor Pobegen

Published in: IRPS (2024)

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