Michael Waltl

Publication Activity (10 Years)

Years Active: 2014-2024
Publications (10 Years): 21

Top Topics

Temporal Evolution

Schottky Barrier

Integrated Circuit

Top Venues

Microelectron. Reliab.

Publications

Margareta V. Stephanie, Lam Pham, Alexander Schindler, Michael Waltl, Tibor Grasser, Bernhard Schrenk
Neural Network with Optical Frequency-Coded ReLU. OFC (2024)
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS (2024)
Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. IRPS (2023)
Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS (2022)
Christoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities. ESSDERC (2022)
Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. IRPS (2022)
Margareta V. Stephanie, Michael Waltl, Tibor Grasser, Bernhard Schrenk
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM. OFC (2022)
Syed Farah Naz, Ambika Prasad Shah, Suhaib Ahmed, Patrick Girard, Michael Waltl
Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata. ETS (2021)
Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS (2021)
Michael Waltl
Defect Spectroscopy in SiC Devices. IRPS (2020)
Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS (2020)
Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS (2020)
Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS (2020)
Ambika Prasad Shah, Michael Waltl
Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits. ICECS (2019)
Ambika Prasad Shah, Amirhossein Moshrefi, Michael Waltl
Utilizing NBTI for Operation Detection of Integrated Circuits. VDAT (2019)
Yury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, Sanchit Deshmukh, Eric Pop, Tibor Grasser
On/Off Current Ratio. DRC (2018)
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS (2018)
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marco Simicic, Adrian Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81 (2018)
Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Reliability of next-generation field-effect transistors with transition metal dichalcogenides. IRPS (2018)
Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marco Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85 (2018)
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC (2017)
Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max C. Lemme, Tibor Grasser
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. ESSDERC (2015)
Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max C. Lemme, Tibor Grasser
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. IRPS (2015)
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Gös, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
Characterization and modeling of charge trapping: From single defects to devices. ICICDT (2014)