A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Ben KaczerJacopo FrancoPieter WeckxPhilippe RousselVamsi PutchaErik BuryMarco SimicicAdrian ChasinDimitri LintenBertrand ParvaisFrancky CatthoorGerhard RzepaMichael WaltlTibor GrasserPublished in: Microelectron. Reliab. (2018)
Keyphrases