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Reliability of next-generation field-effect transistors with transition metal dichalcogenides.

Yury Yu. IllarionovAday J. Molina-MendozaMichael WaltlTheresia KnoblochMarco M. FurchiThomas MuellerTibor Grasser
Published in: IRPS (2018)
Keyphrases
  • field effect transistors
  • steady state
  • high density
  • schottky barrier
  • mathematical analysis
  • semiconductor devices
  • software reliability
  • evolutionary algorithm
  • highly reliable
  • database