Theresia Knobloch

Publication Activity (10 Years)

Years Active: 2017-2024
Publications (10 Years): 7

Top Topics

Mathematical Analysis

Semiconductor Devices

Field Effect Transistors

Schottky Barrier

Top Venues

Microelectron. Reliab.

Publications

J. A. Yang, Eros Reato, Theresia Knobloch, J.-S. Ko, Z. Zhang, Andrew J. Mannix, Krishna Saraswat, Tibor Grasser, Max Christian Lemme, Eric Pop
Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors. DRC (2024)
Theresia Knobloch, Yury Yu. Illarionov, Tibor Grasser
Finding Suitable Gate Insulators for Reliable 2D FETs. IRPS (2022)
Dominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study. ESSDERC (2022)
Yury Yu. Illarionov, A. G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, N. S. Sokolov, Tibor Grasser
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. DRC (2020)
Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Reliability of next-generation field-effect transistors with transition metal dichalcogenides. IRPS (2018)
Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marco Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85 (2018)
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC (2017)