M. I. Vexler

Publication Activity (10 Years)

Years Active: 2001-2020
Publications (10 Years): 1

Top Topics

Mechanical Properties

Atomic Force Microscopy

High Temperature

Top Venues

Publications

Yury Yu. Illarionov, A. G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, N. S. Sokolov, Tibor Grasser
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. DRC (2020)
I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler
Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. Microelectron. Reliab. 47 (4-5) (2007)
S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov
The post-damage behavior of a MOS tunnel emitter transistor. Microelectron. Reliab. 46 (7) (2006)
M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectron. J. 37 (2) (2006)
R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler
Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. Microelectron. Reliab. 44 (3) (2004)
N. Asli, M. I. Vexler, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, P. Seegebrecht
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. Microelectron. Reliab. 41 (7) (2001)