Microelectron. J.

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Publications

volume 144, 2024

Zhigang Shen, Wensuo Chen
Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar. Microelectron. J. 144 (2024)
Cong Wei, Chengying Chen, Gongxing Huang, Lijie Huang, Renping Wang, Rongshan Wei
A 1.8 V 98.6 dB SNDR discrete-time CMOS delta-sigma ADC. Microelectron. J. 144 (2024)
Yanan Tao, Chao Liang, Ziqi Mei, Zhiqiang Song, Yu Wu, Yunna Sun, Wenqiang Zhang, Yong Ruan, Xiaoguang Zhao
Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system. Microelectron. J. 144 (2024)
Yang Chen, Binyu Cai, Changhuan Chen, Weiliang Peng, Quan Sun, Xiaofei Wang, Hong Zhang
A 2-2 MASH ΔΣ ADC with fast-charge CLS input buffer and dual double sampling achieving 103.3-dB SNDR and ±2.5-ppm/FSR INL. Microelectron. J. 144 (2024)
Aryan Kannaujiya, Abhay Pratap Singh, Ambika Prasad Shah
Noninverting Schmitt trigger circuit with electronically tunable hysteresis. Microelectron. J. 144 (2024)
Chenghu Dai, Zihua Ren, Lijun Guan, Haitao Liu, Mengya Gao, Wenjuan Lu, Zhiyong Pang, Chunyu Peng, Xiulong Wu
A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations. Microelectron. J. 144 (2024)
Chia-Wei Pai, Ken Uchida, Munehiro Tada, Hiroki Ishikuro
Design and analysis of a high-speed low-power comparator with regeneration enhancement and through current suppression techniques from 4 K to 300 K in 65-nm Cryo-CMOS. Microelectron. J. 144 (2024)
Hongfei Ke, Hao Li, Peiyong Zhang
High-performance montgomery modular multiplier with NTT and negative wrapped convolution. Microelectron. J. 144 (2024)
Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao
Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. Microelectron. J. 144 (2024)
Xintong Xie, Shuxiang Sun, Zhijia Zhao, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. Microelectron. J. 144 (2024)
Jingchang Bian, Zhengfeng Huang, Yankun Lin, Zhao Yang, Huaguo Liang, Tianming Ni
Reliability analysis and comparison of ring-PUF based on probabilistic models. Microelectron. J. 144 (2024)
Baojun Liu, Xiaokuo Yang, Jing Zhu
Variations of single event transient induced by line edge roughness (LER) and temperature in FinFET. Microelectron. J. 144 (2024)
Fengjuan Wang, Jilin Kou, Xiangkun Yin, Jiangfan Liu, Kai Jing, Ningmei Yu, Yuan Yang, Qian Li
A compact fifth-order SIW BPF based on TSV technology with high selectivity. Microelectron. J. 144 (2024)
Ali Badawy, Ayman H. Ismail
Inverter-based noise-shaping SAR ADC for low-power applications. Microelectron. J. 144 (2024)
K. Manikanta, Umakanta Nanda, Chandan Kumar Pandey
Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components. Microelectron. J. 144 (2024)
Tiancheng Li, Erping Li, Huali Duan, Zhufei Chu, Jian Wang, Wenchao Chen
Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor. Microelectron. J. 144 (2024)
Qisheng Yu, Zhengyuan Zhang, Aohang Zhang, Jiaweiwen Huang, Wensuo Chen
Comprehensive experimental study on Schottky contact super barrier rectifier. Microelectron. J. 144 (2024)
Ge Shi, Xiangzhan Hu, Shengyao Jia, Xing Liang, Yanwei Sun, Mang Shi, Binrui Wang
Single inductor multi-PZTs SECE and electromagnetic voltage multiplier rectifier hybrid interface circuit. Microelectron. J. 144 (2024)
Aditi Roy, Kokila Jagadeesh, Ramasubramanian Natarajan, B. Shameedha Begum
OTK-based PUF CRP obfuscation for IoT device authentication. Microelectron. J. 144 (2024)
Yuming Li, Shuai Peng, Weiliang Peng, Yang Chen, Zhiming Li, Jie Zhang, Xiaofei Wang, Hong Zhang
A 10-kHz BW 104.3-dB DR discrete-time delta-sigma modulator with ring-amplifier-based integrator. Microelectron. J. 144 (2024)
Rong Zhou, Jianhang Yang, Linwei Wang, Xiaoteng Zhao, Shubin Liu, Depeng Sun
A wideband low power RF Receiver Front-End for Internet-of-Things applications. Microelectron. J. 144 (2024)
Tammisetti Ashok, Chandan Kumar Pandey
Demonstration of a novel Dual-Source Elevated-Channel Dopingless TFET with improved DC and Analog/RF performance. Microelectron. J. 144 (2024)
Huicheng Zhao, Bo Yu, Ning Wei, Hongzhen Chu, Yuehua Li, Xinlin Wang, Hongyu He
A 6T1C pixel circuit compensating for TFT electrical characteristics variations, voltage drop, and OLED degradation. Microelectron. J. 144 (2024)
Rong Zhou, Linwei Wang, Jianhang Yang, Zhen Li, Xiaoteng Zhao, Shubin Liu
A 8.1-nW, 4.22-kHz, -40-85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applications. Microelectron. J. 144 (2024)
Jiale Ding, Yukai Huang, Hao Zhang, Tian Feng, Feida Wang, Dengquan Li, Zhangming Zhu
8-bit 32-GS/s TI-SAR ADC with optimized hierarchical sampling architecture. Microelectron. J. 144 (2024)
Yongliang Chen, Xiaole Cui, Xiaoxin Cui, Xing Zhang
The area-efficient gate level information flow tracking schemes of digital circuit with multi-level security lattice. Microelectron. J. 144 (2024)
Sushmita Kumari, Puja Ghosh
Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET. Microelectron. J. 144 (2024)
Shengqi Li, Guodong Su, Xiang Wang, Jun Liu
A 8-12 GHz power amplifier with high out-of-band rejection. Microelectron. J. 144 (2024)
Junyi Qian, Yuxin Ji, Cai Li
A runtime-reconfigurable convolutional engine using tensor multiplication with multiple computing modes in 22-nm CMOS. Microelectron. J. 144 (2024)
T. S. Manivannan, K. R. Pasupathy, Mohd Rizwan Uddin Shaikh, G. Lakshminarayanan
Optimization of DE-QG TFET using novel CIP and DCT techniques. Microelectron. J. 144 (2024)

volume 143, 2024