Wensuo Chen

Publication Activity (10 Years)

Years Active: 2017-2024
Publications (10 Years): 9

Top Topics

Surface Features

Precise Localization

Electron Microscope

Top Venues

Microelectron. J.

IEICE Electron. Express

Microelectron. Reliab.

IEICE Trans. Electron.

Publications

Hang Shu, Pengfei Liao, Haiqing Peng, Wensuo Chen
A transient-enhanced output-capacitorless LDO regulator with non-inverting pull-push gain stage. Microelectron. J. 151 (2024)
Jiaweiwen Huang, Wensuo Chen, Shenglei Zhao, Qisheng Yu, Aohang Zhang, Kunfeng Zhu, Jian Li
Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance. Microelectron. J. 151 (2024)
Qisheng Yu, Zhengyuan Zhang, Aohang Zhang, Jiaweiwen Huang, Wensuo Chen
Comprehensive experimental study on Schottky contact super barrier rectifier. Microelectron. J. 144 (2024)
Peijian Zhang, Kunfeng Zhu, Wensuo Chen
A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier. IEICE Trans. Electron. 107 (1) (2024)
Yuying Wang, Zhengyuan Zhang, Peng Jian, Pengfei Liao, Aohang Zhang, Kunfeng Zhu, Wensuo Chen
Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position. Microelectron. J. 147 (2024)
Zhigang Shen, Pengfei Liao, Qisheng Yu, Jiaweiwen Huang, Aohang Zhang, Wensuo Chen
Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top. Microelectron. J. 147 (2024)
Zhigang Shen, Wensuo Chen
Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar. Microelectron. J. 144 (2024)
Yuying Wang, Aohang Zhang, Peng Jian, Wensuo Chen
A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels. IEICE Electron. Express 19 (16) (2022)
Peijian Zhang, Xue Wu, Qianning Yi, Wensuo Chen, Yonghui Yang, Kunfeng Zhu, Kaizhou Tan, Yi Zhong
A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels. Microelectron. Reliab. 71 (2017)