I. V. Grekhov

Publication Activity (10 Years)

Years Active: 2001-2007
Publications (10 Years): 0

Publications

I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler
Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. Microelectron. Reliab. 47 (4-5) (2007)
S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov
The post-damage behavior of a MOS tunnel emitter transistor. Microelectron. Reliab. 46 (7) (2006)
M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectron. J. 37 (2) (2006)
N. Asli, M. I. Vexler, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, P. Seegebrecht
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. Microelectron. Reliab. 41 (7) (2001)