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Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon.

I. V. GrekhovG. G. KarevaS. E. TyaginovM. I. Vexler
Published in: Microelectron. Reliab. (2007)
Keyphrases
  • high speed
  • low cost
  • parameter values
  • maximum likelihood
  • parameter estimation
  • input parameters
  • measured data
  • lower bound
  • expectation maximization
  • lognormal distribution