Stanislav Tyaginov

Publication Activity (10 Years)

Years Active: 2009-2024
Publications (10 Years): 21

Top Topics

Mobile Handheld Devices

Distribution Function

Reliability Assessment

Analytical Models

Top Venues

Microelectron. Reliab.

Publications

Pablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny, Stanislav Tyaginov, Georges G. E. Gielen, Erik Bury, Ben Kaczer
Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. IRPS (2024)
L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS (2023)
Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer
Reliability challenges in Forksheet Devices: (Invited Paper). IRPS (2023)
Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS (2022)
Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. IRPS (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS (2022)
Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS (2022)
Erik Bury, Adrian Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS (2022)
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS (2021)
Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS (2021)
Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer
A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS (2021)
Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS (2020)
Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS (2020)
Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS (2020)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS (2019)
Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC (2019)
Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS (2019)
Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC (2016)
Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs. Microelectron. Reliab. 55 (9-10) (2015)
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS (2015)
Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser
An analytical approach for physical modeling of hot-carrier induced degradation. Microelectron. Reliab. 51 (9-11) (2011)
Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser
Interface traps density-of-states as a vital component for hot-carrier degradation modeling. Microelectron. Reliab. 50 (9-11) (2010)
Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49 (9-11) (2009)